MOSFETs from Manufacturers in Japan - Page 150

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 150 of 161
1200 V, 91 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
43 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
36 to 72 Milliohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
176 W
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
0.1 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1500 to 15000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.1 W
Package:
SOT-883
Applications:
High Speed Switching Applications, Analog Switch A...
more info
20 V, , N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 to 0.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
800 to 4800 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Package:
SOT-416FL
Industry:
Industrial, Commercial
Applications:
Switching
more info
0.15 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1500 to 15000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-323
Applications:
High Speed Switching Applications, Analog Switch A...
more info
30 V, 39 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-18 to 18 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.5 to 5.8 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
0.4 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2300 to 6000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.4 W
Package:
SOT-416
Applications:
Load Switching Applications
more info
30 V, 6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
28 to 56 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
2 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
45 to 109 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Package:
SOT-23
Applications:
Power Management Switches, DC-DC Converters
more info
650 V, 48 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
80 to 115 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
134 W
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
0.1 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1650 to 5600 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.1 W
Package:
SOT-23
Applications:
High Speed Switching Applications, Analog Switch A...
more info
1200 V, 51 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
105 to 158 Milliohm
Gate Source Voltage:
-4 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
0.5 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.25 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
750 to 9000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-23
Applications:
High-Speed Switching, Analog Switches
more info
60 V, , N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 to 0.25 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 12000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.35 W
Package:
SOT23
Industry:
Industrial, Commercial
Applications:
Switching circuits, Low-side loadswitch, Relay dri...
more info
0.15 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2300 to 6000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-323
Applications:
Load Switching Applications
more info
1200 V, 110 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 115 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info

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