1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 152

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 152 of 161
SCT3030AR Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SCT3030AR

MOSFET from ROHM Semiconductor
650 V, 104 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
30 to 43 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
262 W
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM3J56MFV Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J56MFV

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.8 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
310 to 4000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-723
Applications:
Load Switching Applications
more info
SCT3030AL Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SCT3030AL

MOSFET from ROHM Semiconductor
650 V, 104 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
30 to 39.6 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
262 W
Package:
TO-247N
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM3J352F Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J352F

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
90 to 443 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.2 W
Temperature operating range:
150 Degree C
Package:
SOT-346
Applications:
Power Management Switches
more info
RQ6E035TN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ6E035TN

MOSFET from ROHM Semiconductor
30 V, 6.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
38 to 77 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3J132TU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J132TU

MOSFET from Toshiba
-12 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.4 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
14 to 94 Milliohm
Gate Source Voltage:
-6 to 6 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Power Management Switches
more info
RS1P600BH Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RS1P600BH

MOSFET from ROHM Semiconductor
100 V, 64 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-60 to 60 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6.7 to 12.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Primary side switch, Moter drives, DC/DC converter
more info
SSM3J135TU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J135TU

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
79 to 260 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Power Management Switch Applications
more info
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - S4603

MOSFET from ROHM Semiconductor
1200 V, 91 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
43 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
36 to 72 Milliohm
Gate Source Voltage:
-4 to 21 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM3J65CTC Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J65CTC

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.7 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
400 to 11300 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Temperature operating range:
150 Degree C
Package:
CST3C
Applications:
Power Management Switches
more info
RQ5E070BN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ5E070BN

MOSFET from ROHM Semiconductor
30 V, 23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
12.4 to 20.4 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3J353F Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J353F

MOSFET from Toshiba
-30 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
125 to 274 Milliohm
Gate Source Voltage:
-25 to 20 V
Power Dissipation:
1.2 W
Temperature operating range:
150 Degree C
Package:
SOT-346
Applications:
Power Management Switches
more info
RQ3E180BN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ3E180BN

MOSFET from ROHM Semiconductor
30 V, 72 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-39 to 39 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.8 to 5.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3J120TU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J120TU

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
28 to 140 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Power Management Switch Applications, High-Current...
more info
RD3P050SN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RD3P050SN

MOSFET from ROHM Semiconductor
100 V, 14 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
135 to 205 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Package:
TO252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.