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MOSFETs from Manufacturers in Japan - Page 154

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 154 of 161
RE1J002YN Image
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ROHM Semiconductor - RE1J002YN

MOSFET from ROHM Semiconductor
50 V, , N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 to 0.2 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1600 to 9000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Package:
SOT-416FL
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3J130TU Image
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Toshiba - SSM3J130TU

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
20.9 to 41.1 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Power Management Switch Applications
more info
SCT3017ALHR Image
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ROHM Semiconductor - SCT3017ALHR

MOSFET from ROHM Semiconductor
650 V, 172 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
118 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
17 to 25 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
427 W
Package:
TO-247N
Industry:
Industrial, Automotive
Applications:
Automobile, Switch mode power supplies
more info
SSM3J134TU Image
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Toshiba - SSM3J134TU

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
78.5 to 540 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Power Management Switch Applications
more info
RQ3E070BN Image
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ROHM Semiconductor - RQ3E070BN

MOSFET from ROHM Semiconductor
30 V, 8.9 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
20 to 39 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
13 W
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3J35CTC Image
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Toshiba - SSM3J35CTC

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1100 to 20000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Temperature operating range:
150 Degree C
Package:
CST3C
Applications:
Analog Switches
more info
RQ6C050UN Image
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ROHM Semiconductor - RQ6C050UN

MOSFET from ROHM Semiconductor
20 V, 12 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
22 to 80 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.25 W
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3J355R Image
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Toshiba - SSM3J355R

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
23 to 52.3 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOT-23
Applications:
Power Management Switches
more info
RQ5E025TN Image
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ROHM Semiconductor - RQ5E025TN

MOSFET from ROHM Semiconductor
30 V, 4.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
66 to 133 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3J35CT Image
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Toshiba - SSM3J35CT

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
4300 to 44000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.1 W
Temperature operating range:
150 Degree C
Package:
SOT-883
Applications:
High-Speed Switching Applications, Analog Switch A...
more info
RD3L150SN Image
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ROHM Semiconductor - RD3L150SN

MOSFET from ROHM Semiconductor
60 V, 18 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-15 to 15 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
28 to 51 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Package:
TO252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3J64CTC Image
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Toshiba - SSM3J64CTC

MOSFET from Toshiba
-12 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
290 to 11300 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Temperature operating range:
150 Degree C
Package:
CST3C
Applications:
Power Management Switches
more info
SCT3030KLHR Image
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ROHM Semiconductor - SCT3030KLHR

MOSFET from ROHM Semiconductor
1200 V, 131 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
72 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
30 to 51 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
339 W
Package:
TO-247N
Industry:
Industrial, Automotive
Applications:
Automobile, Switch mode power supplies
more info
SSM3J133TU Image
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Toshiba - SSM3J133TU

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
24.9 to 56 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Power Management Switch Applications
more info
RD3L080SN Image
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ROHM Semiconductor - RD3L080SN

MOSFET from ROHM Semiconductor
60 V, 9.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
57 to 109 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Package:
TO252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
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