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MOSFETs from Manufacturers in Japan - Page 151

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 151 of 161
SSM3K16CTC Image
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Toshiba - SSM3K16CTC

MOSFET from Toshiba
0.5 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1600 to 5600 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
CST3C
Applications:
High-Speed Switching, Analog Switches
more info
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ROHM Semiconductor - S4008

MOSFET from ROHM Semiconductor
650 V, 58 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
60 to 79.2 Milliohm
Gate Source Voltage:
-4 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM3K339R Image
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Toshiba - SSM3K339R

MOSFET from Toshiba
2 W, 40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
145 to 390 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Package:
SOT-23
Applications:
Power Management Switches, DC-DC Converters
more info
SCT3060AL Image
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ROHM Semiconductor - SCT3060AL

MOSFET from ROHM Semiconductor
650 V, 58 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
60 to 79.2 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
165 W
Package:
TO-247N
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM3K15AFU Image
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Toshiba - SSM3K15AFU

MOSFET from Toshiba
0.15 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2300 to 6000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-323
Applications:
Load Switching Applications
more info
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ROHM Semiconductor - S2306

MOSFET from ROHM Semiconductor
1200 V, 62 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 226 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM3K35AFS Image
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Toshiba - SSM3K35AFS

MOSFET from Toshiba
0.5 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.25 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
750 to 9000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-23
Applications:
High-Speed Switching, Analog Switches
more info
RQ3E180GN Image
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ROHM Semiconductor - RQ3E180GN

MOSFET from ROHM Semiconductor
30 V, 22.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-39 to 39 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.3 to 6.1 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3K37FS Image
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Toshiba - SSM3K37FS

MOSFET from Toshiba
0.1 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1650 to 5600 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.1 W
Package:
SOT-416
Applications:
High Speed Switching Applications, Analog Switch A...
more info
SCT2080KE Image
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ROHM Semiconductor - SCT2080KE

MOSFET from ROHM Semiconductor
1200 V, 106 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 125 Milliohm
Gate Source Voltage:
-6 to 22 V
Power Dissipation:
262 W
Package:
TO-247N
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM3K56MFV Image
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Toshiba - SSM3K56MFV

MOSFET from Toshiba
0.5 W, 20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
186 to 840 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.5 W
Package:
SOT-723
Applications:
High-Speed Switching
more info
RE1C001UN Image
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ROHM Semiconductor - RE1C001UN

MOSFET from ROHM Semiconductor
20 V, , N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 to 0.1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
2500 to 18000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Package:
SOT-416FL
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM3J09FU Image
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Toshiba - SSM3J09FU

MOSFET from Toshiba
-30 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2100 to 6000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Applications:
Management Switch High Speed Switching Application...
more info
SCT3022KL Image
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ROHM Semiconductor - SCT3022KL

MOSFET from ROHM Semiconductor
1200 V, 178 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
95 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22 to 33 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
427 W
Package:
TO-247N
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM3J56ACT Image
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Toshiba - SSM3J56ACT

MOSFET from Toshiba
-20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
310 to 4000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.5 W
Temperature operating range:
150 Degree C
Package:
SOT-883
Applications:
High-Speed Switching
more info
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