1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 156

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 156 of 161
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - S2301

MOSFET from ROHM Semiconductor
1200 V, 106 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 125 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
2SK2313 Image
Download Datasheet  Request Quote  Product Details

Toshiba - 2SK2313

MOSFET from Toshiba
60 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
8 to 15 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
150 Degree C
Package:
TO-3P
Applications:
Chopper Regulator, DC-DC Converter and Motor Drive
more info
RD3G600GN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RD3G600GN

MOSFET from ROHM Semiconductor
40 V, 46.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-60 to 60 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.8 to 4.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Package:
TO252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
2SK2009 Image
Download Datasheet  Request Quote  Product Details

Toshiba - 2SK2009

MOSFET from Toshiba
30 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1200 to 2000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
150 Degree C
Package:
SOT-346
Applications:
High Speed Switching Applications, Analog Switch A...
more info
SCT4062KE Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SCT4062KE

MOSFET from ROHM Semiconductor
1200 V, 64 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
62 to 124 Milliohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
115 W
Package:
TO-247N
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
2SJ168 Image
Download Datasheet  Request Quote  Product Details

Toshiba - 2SJ168

MOSFET from Toshiba
-60 V P-Channel Enhancement Mode MOSFET for Interface Applications

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-200 mA
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
2 Ohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
200 mW
Temperature operating range:
150 Degree C
Package:
SOT-346
Applications:
High Speed Switching Applications, Analog Switch A...
more info
RQ5H020TN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ5H020TN

MOSFET from ROHM Semiconductor
45 V, 4.1 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
130 to 250 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
2SJ305 Image
Download Datasheet  Request Quote  Product Details

Toshiba - 2SJ305

MOSFET from Toshiba
-30 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2400 to 4000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
150 Degree C
Package:
SOT-346
Applications:
High Speed Switching Applications, Analog Applicat...
more info
SCT3060AW7 Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SCT3060AW7

MOSFET from ROHM Semiconductor
650 V, 58 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
60 to 86 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
159 W
Package:
TO-263-7L
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SSM10N954L Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM10N954L

MOSFET from Toshiba
Dual N Channel Power MOSFET for Battery Protection Circuits

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.8 to 1.4 W
Applications:
Battery protection circuits
more info
SCT2280KE Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SCT2280KE

MOSFET from ROHM Semiconductor
1200 V, 36 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
280 to 388 Milliohm
Gate Source Voltage:
-6 to 22 V
Power Dissipation:
108 W
Package:
TO-247N
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
SCT3120AL Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SCT3120AL

MOSFET from ROHM Semiconductor
650 V, 38 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
120 to 158.4 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
103 W
Package:
TO-247N
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
RD3G400GN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RD3G400GN

MOSFET from ROHM Semiconductor
40 V, 19 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5.6 to 9.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
26 W
Package:
TO252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
SCT2450KEHR Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - SCT2450KEHR

MOSFET from ROHM Semiconductor
1200 V, 27 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
450 to 610 Milliohm
Gate Source Voltage:
-6 to 22 V
Power Dissipation:
85 W
Package:
TO-247N
Industry:
Industrial, Automotive
Applications:
Automobile, Switch mode power supplies
more info
RQ7G080BG Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ7G080BG

MOSFET from ROHM Semiconductor
40 V, 10.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
12.7 to 24 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Package:
TSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.