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MOSFETs from Manufacturers in Japan - Page 65

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 65 of 161
SSM3K127TU Image
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Toshiba - SSM3K127TU

MOSFET from Toshiba
30 V, 1.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
93 to 286 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Package:
SOT-323
Applications:
Power Management Switch Applications, High-Speed S...
more info
2SK1697 Image
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Renesas - 2SK1697

MOSFET from Renesas
60 V, 0.5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1300 to 2500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
High speed power switching
more info
RK7002BMHZG Image
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ROHM Semiconductor - RK7002BMHZG

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 to 0.25 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 12000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.35 W
Temperature operating range:
150 Degree C
Package:
SOT-23
Industry:
Commercial, Automotive
Applications:
Switching circuits, Low-side loadswitch, Relay dri...
more info
SSM3K44FS Image
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Toshiba - SSM3K44FS

MOSFET from Toshiba
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2200 to 7000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-416
Applications:
High-Speed Switching Applications, Analog Switchin...
more info
2SK3484-Z Image
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Renesas - 2SK3484-Z

MOSFET from Renesas
100 V, -16 to 16 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-16 to 16 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
100 to 148 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252(MP-3Z)
Industry:
Commercial, Industrial
more info
RTR040N03HZG Image
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ROHM Semiconductor - RTR040N03HZG

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
34 to 66 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3J168F Image
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Toshiba - SSM3J168F

MOSFET from Toshiba
-60 V, 3 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.4 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
1300 to 2000 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
1.2 W
Package:
S-Mini
Applications:
High-Speed Switching, Analog Switches, Interfacing
more info
2SK3484-ZK Image
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Renesas - 2SK3484-ZK

MOSFET from Renesas
100 V, -16 to 16 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-16 to 16 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
100 to 148 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252(MP-3Z)
Industry:
Commercial, Industrial
more info
RD3P100SNFRA Image
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ROHM Semiconductor - RD3P100SNFRA

MOSFET from ROHM Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-10 to 10 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
95 to 147 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3K7002KFU Image
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Toshiba - SSM3K7002KFU

MOSFET from Toshiba
60 V, 0.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.4 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1050 to 1750 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-323
Applications:
High-Speed Switching
more info
2SK3479-Z Image
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Renesas - 2SK3479-Z

MOSFET from Renesas
100 V, -83 to 83 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-83 to 83 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
8.8 to 13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220SMD
Industry:
Commercial, Industrial
more info
RD3H200SNFRA Image
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ROHM Semiconductor - RD3H200SNFRA

MOSFET from ROHM Semiconductor
45 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
20 to 40 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3J118TU Image
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Toshiba - SSM3J118TU

MOSFET from Toshiba
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
180 to 480 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.8 W
Package:
UFM
Applications:
High Speed Switching Applications
more info
2SK1764 Image
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Renesas - 2SK1764

MOSFET from Renesas
60 V, 2 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
300 to 600 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
Low Frequency amplifier, High speed switching
more info
RD3L080SNFRA Image
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ROHM Semiconductor - RD3L080SNFRA

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
57 to 109 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
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