MOSFETs from Manufacturers in Japan - Page 64

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 64 of 161
20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
460 to 1520 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-416
Applications:
High-Speed Switching Applications
more info
60 V, -65 to 65 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-65 to 65 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7.2 to 8.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
87.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
Applications:
For high current switching
more info
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
50 to 100 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Commercial, Automotive
Applications:
Switching
more info
30 V, 2.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
26 to 56 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Package:
SOT-23
Applications:
Power Management Switches, DC-DC Converters
more info
60 V, -100 to 100 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-100 to 100 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.7 to 4.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
156 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-262
Industry:
Commercial, Industrial
Applications:
For high current switching
more info
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
40 to 79 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Commercial, Automotive
Applications:
Switching
more info
34 V, 3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
34 V
Drain Source Resistance:
200 to 295 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Package:
UFM
Applications:
Relay Drivers
more info
30 V, -48 to 48 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-48 to 48 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7.7 to 17 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Commercial, Industrial
Applications:
DC/DC converters
more info
-45 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-16 to 16 A
Drain Source Breakdown Voltage:
-45 V
Drain Source Resistance:
35 to 70 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
600 V, 18.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
420 to 500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
1500 V, 4 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
1500 V
Drain Source Resistance:
4600 to 7000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3P
Industry:
Commercial, Industrial
Applications:
High speed power switching
more info
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
80 to 200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Commercial, Automotive
Applications:
Switching
more info
650 V, 25 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
700 to 840 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Package:
TO-220
Applications:
Switching Regulator Applications
more info
60 V, 5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
42 to 100 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK(S)
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
96 to 235 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Commercial, Automotive
Applications:
Switching
more info

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