1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 67

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 67 of 161
SSM6K407TU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM6K407TU

MOSFET from Toshiba
60 V, 6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
220 to 440 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
DC-DC Converter, Relay Drive and Motor Drive Appli...
more info
N0608N Image
Download Datasheet  Request Quote  Product Details

Renesas - N0608N

MOSFET from Renesas
60 V, -52 to 52 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-52 to 52 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
12.3 to 14.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
Applications:
For high current switching
more info
RHU002N06FRA Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RHU002N06FRA

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 to 0.2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1700 to 4000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
150 Degree C
Package:
SOT-323
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM6K809R Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM6K809R

MOSFET from Toshiba
60 V, 9.3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
28 to 69 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3 W
Package:
TSOP6F
Applications:
Power Management Switches, DC-DC Converters
more info
Download Datasheet  Request Quote  Product Details

Renesas - N0434N

MOSFET from Renesas
40 V, -100 to 100 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-100 to 100 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.7 to 3.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
119 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-262
Industry:
Commercial, Industrial
Applications:
For high current switching
more info
RD3P050SNFRA Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RD3P050SNFRA

MOSFET from ROHM Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
135 to 205 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM6K403TU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM6K403TU

MOSFET from Toshiba
20 V, 16.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
19 to 66 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
Power Management Switches, High-Speed Switching
more info
RJF0608JSP Image
Download Datasheet  Request Quote  Product Details

Renesas - RJF0608JSP

MOSFET from Renesas
60 V, 5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
42 to 100 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RUR040N02HZG Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RUR040N02HZG

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
25 to 110 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3K62TU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3K62TU

MOSFET from Toshiba
20 V, 2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
43 to 432 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Package:
SOT-323
Applications:
Power Management Switches, DC-DC Converters
more info
RJF0408JPD Image
Download Datasheet  Request Quote  Product Details

Renesas - RJF0408JPD

MOSFET from Renesas
40 V, 30 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
19 to 40 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK(S)
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RTR020N05HZG Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RTR020N05HZG

MOSFET from ROHM Semiconductor
45 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
130 to 250 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3K15FS Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3K15FS

MOSFET from Toshiba
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2200 to 7000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.1 W
Package:
SOT-416
Applications:
High Speed Switching Applications, Analog Switch A...
more info
Download Datasheet  Request Quote  Product Details

Renesas - 2SK3365

MOSFET from Renesas
30 V, -30 to 30 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
11.5 to 29 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
36 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251(MP-3)
Industry:
Commercial, Industrial
Applications:
DC/DC converters
more info
RSR025N05HZG Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RSR025N05HZG

MOSFET from ROHM Semiconductor
45 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
70 to 160 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
Switching
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.