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MOSFETs from Manufacturers in Japan - Page 69

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 69 of 161
TK9Q65W Image
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Toshiba - TK9Q65W

MOSFET from Toshiba
650 V, 20 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
460 to 560 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Package:
IPAK
Applications:
Switching Voltage Regulators
more info
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Renesas - N0601N

MOSFET from Renesas
60 V, -100 to 100 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-100 to 100 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.3 to 4.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
156 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Commercial, Industrial
Applications:
For high current switching
more info
RTQ045N03HZG Image
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ROHM Semiconductor - RTQ045N03HZG

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
30 to 60 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3J36TU Image
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Toshiba - SSM3J36TU

MOSFET from Toshiba
-20 V, 1.2 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.33 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
950 to 3600 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.8 W
Package:
SOT-323
Applications:
Power Management Switches
more info
2SK3385 Image
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Renesas - 2SK3385

MOSFET from Renesas
60 V, -30 to 30 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
22 to 45 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
36 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251(MP-3)
Industry:
Commercial, Industrial
more info
RTR030N05HZG Image
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ROHM Semiconductor - RTR030N05HZG

MOSFET from ROHM Semiconductor
45 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
48 to 95 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3K347R Image
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Toshiba - SSM3K347R

MOSFET from Toshiba
38 V, 2.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
38 V
Drain Source Resistance:
280 to 480 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Package:
SOT-23
Applications:
Relay Drivers
more info
2SJ601-ZK Image
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Renesas - 2SJ601-ZK

MOSFET from Renesas
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
25 to 46 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1 to 65 W
Package:
TO-252
Industry:
Commercial
more info
RSQ015N06HZG Image
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ROHM Semiconductor - RSQ015N06HZG

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
210 to 350 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Commercial, Automotive
Applications:
DC/DC converters
more info
SSM3J356R Image
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Toshiba - SSM3J356R

MOSFET from Toshiba
-60 V, 8.3 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
240 to 300 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
2 W
Package:
SOT-23
Applications:
Power Management Switches
more info
2SJ601-Z Image
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Renesas - 2SJ601-Z

MOSFET from Renesas
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
25 to 46 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1 to 65 W
Package:
TO-252
Industry:
Commercial
more info
RSR030N06HZG Image
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ROHM Semiconductor - RSR030N06HZG

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
60 to 105 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
DC/DC converters
more info
SSM3J351R Image
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Toshiba - SSM3J351R

MOSFET from Toshiba
-60 V, 15.1 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
107 to 184 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
2 W
Package:
SOT-23
Applications:
Power Management Switches
more info
2SJ601 Image
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Renesas - 2SJ601

MOSFET from Renesas
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
25 to 46 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1 to 65 W
Package:
TO-251
Industry:
Commercial
more info
RD3P175SNFRA Image
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ROHM Semiconductor - RD3P175SNFRA

MOSFET from ROHM Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-17.5 to 17.5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
75 to 119 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
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