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MOSFETs from Manufacturers in Japan - Page 81

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 81 of 161
TK3A65DA Image
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Toshiba - TK3A65DA

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
2300 to 2510 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Regulator Applications
more info
RD3T050CN Image
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ROHM Semiconductor - RD3T050CN

MOSFET from ROHM Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
540 to 760 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
29 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching Power Supply
more info
TK290P60Y Image
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Toshiba - TK290P60Y

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
230 to 290 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
100 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
RCJ120N25 Image
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ROHM Semiconductor - RCJ120N25

MOSFET from ROHM Semiconductor
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-12 to 12 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
180 to 480 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
107 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
TK31J60W Image
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Toshiba - TK31J60W

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
73 to 88 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
230 W
Temperature operating range:
150 Degree C
Package:
TO-3P
Applications:
Switching Voltage Regulators
more info
US5U2 Image
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ROHM Semiconductor - US5U2

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.4 to 1.4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
170 to 380 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
0.7 W
Temperature operating range:
150 Degree C
Package:
SOT-353T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK4P55DA Image
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Toshiba - TK4P55DA

MOSFET from Toshiba
550 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
200 to 2450 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
QH8JA1 Image
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ROHM Semiconductor - QH8JA1

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
28 to 77 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK4P50D Image
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Toshiba - TK4P50D

MOSFET from Toshiba
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1700 to 2000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Voltage Regulators
more info
QS8J2 Image
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ROHM Semiconductor - QS8J2

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
26 to 132 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK31E60X Image
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Toshiba - TK31E60X

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
73 to 88 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
230 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
QS8J4 Image
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ROHM Semiconductor - QS8J4

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
40 to 84 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK25N60X Image
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Toshiba - TK25N60X

MOSFET from Toshiba
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
105 to 125 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
180 W
Temperature operating range:
150 Degree C
Package:
TO-247
Applications:
Switching Voltage Regulators
more info
RCJ081N20 Image
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ROHM Semiconductor - RCJ081N20

MOSFET from ROHM Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
550 to 1540 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
TK5A90E Image
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Toshiba - TK5A90E

MOSFET from Toshiba
900 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
2500 to 3100 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
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