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MOSFETs - Page 177

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 177 of 1280
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Isahaya Electronics - INK0001AC1-T150

MOSFET from Isahaya Electronics
50 V, 100 mA, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 mA
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
3.5 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
Inductive loads switching
more info
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Oriental Semiconductor - OSQ65R048K9T2F

MOSFET from Oriental Semiconductor
650 V, 32 to 42 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
32 to 42 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
48 to 91 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
189 W
Temperature operating range:
-55 to 175 Degree C
Package:
X2PAK
Industry:
Industrial, Commercial, Automotive
Applications:
On-board charger/PFC, EV motor drive, High voltage...
more info
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Galaxy Century Microelectronics - BSS138LV

MOSFET from Galaxy Century Microelectronics
±20 V, 0.21 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.21 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1550 to 5500 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Military, Industrial, Commercial
Applications:
DC-DC converters, Power management functions, Batt...
more info
SSM6P36TU Image
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Toshiba - SSM6P36TU

MOSFET from Toshiba
-20 V, 1.2 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.33 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
950 to 3600 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.5 W
Package:
UF6
Applications:
Power Management Switches
more info
RJK5030DPP-M0 Image
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Renesas - RJK5030DPP-M0

MOSFET from Renesas
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1300 to 1600 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
28.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FL
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
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ROHM Semiconductor - RQ3N040ATTB1

MOSFET from ROHM Semiconductor
-80 V, -10 to 10 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 to 10 A
Drain Source Breakdown Voltage:
-80 V
Drain Source Resistance:
97 to 146 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 to 15 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives
more info
IPT60R099CM8 Image
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Infineon Technologies - IPT60R099CM8

MOSFET from Infineon Technologies
600 V, 18 to 30 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 to 30 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.083 to 0.183 ohm
Gate Source Voltage:
±20 V
Power Dissipation:
186 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HSOF-8
Industry:
Industrial, Commercial
Applications:
Datacenter, AI server, Telecom Power Supply, Micro...
more info
SiS108DN-T1-GE3 Image
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Vishay - SiS108DN-T1-GE3

MOSFET from Vishay
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
28 to 44 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
24 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Primary side switch, DC/DC converter, Motor drive ...
more info
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onsemi - NVTYS005N04CLTWG

MOSFET from onsemi
-20 to 20 V, 10.9 to 23.1 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4 to 7.6 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK8
Industry:
Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
STP8N80K5 Image
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STMicroelectronics - STP8N80K5

MOSFET from STMicroelectronics
-30 to 30 V, 16.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
800 to 950 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
P23F40HP2FM Image
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Shindengen America - P23F40HP2FM

MOSFET from Shindengen America
400 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
170 to 240 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
104 W
Temperature operating range:
150 Degree C
Package:
FTO-220A
Industry:
Commercial, Industrial
more info
IXTX90P20P Image
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Littelfuse - IXTX90P20P

MOSFET from Littelfuse
-200 V, 205 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
44 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 PLUS
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
DMP3097LQ Image
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Diodes Incorporated - DMP3097LQ

MOSFET from Diodes Incorporated
-20 to 20 V, 6.6 to 13.4 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.7 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
53 to 99 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.52 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
C3M0065100K Image
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Wolfspeed - C3M0065100K

MOSFET from Wolfspeed
-8 to 19 V, 37 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 to 32 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
65 to 95 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
113.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO 247-4
Applications:
Renewable energy, EV battery chargers, High voltag...
more info
APT80M60J Image
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Microchip Technology - APT80M60J

MOSFET from Microchip Technology
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
84 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
55 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
960 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Industry:
Commercial, Military
more info
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