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MOSFETs - Page 205

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 205 of 1280
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uPI Semiconductor - QM3003D

MOSFET from uPI Semiconductor
-30 V, -6.8 to -13.4 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.8 to -13.4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
16 to 32 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
34.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO252
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
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Isahaya Electronics - INK0010AU1

MOSFET from Isahaya Electronics
60 V, 100 to 400 mA, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 to 400 mA
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.0 to 4.0 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-75A
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
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Oriental Semiconductor - OSG25R019FF

MOSFET from Oriental Semiconductor
250 V, 36 to 57 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 to 57 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
12 to 27 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
87 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - T2N5003M

MOSFET from Galaxy Century Microelectronics
±20 V, 0.3 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1200 to 3200 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-723
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
SSM6N67NU Image
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Toshiba - SSM6N67NU

MOSFET from Toshiba
30 V, 3.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
30 to 82 Milliohm
Gate Source Voltage:
-8 to 12 V
Power Dissipation:
2 W
Package:
UDFN6
Applications:
Power Management Switches, DC-DC Converters
more info
RJK0349DSP Image
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Renesas - RJK0349DSP

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.9 to 5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - SH8KC5TB1

MOSFET from ROHM Semiconductor
60 V, -3.5 to 3.5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
73 to 148 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 to 2.0 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives
more info
IPW60R037CM8 Image
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Infineon Technologies - IPW60R037CM8

MOSFET from Infineon Technologies
600 V, 40 to 64 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 to 64 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.031 to 0.068 ohm
Gate Source Voltage:
±20 V
Power Dissipation:
329 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO247-3
Industry:
Industrial, Commercial
Applications:
Power supplies and converters, PFC stages & LLC re...
more info
SiS126DN-T1-GE3 Image
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Vishay - SiS126DN-T1-GE3

MOSFET from Vishay
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45.1 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
8.5 to 12.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
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onsemi - NVMFS6D1N08HT1G

MOSFET from onsemi
-20 to 20 V, 10 to 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
89 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.5 to 5.5 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Synchronous Rectification, AC-DC and DC-DC Power S...
more info
STP7NK80ZFP Image
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STMicroelectronics - STP7NK80ZFP

MOSFET from STMicroelectronics
-30 to 30 V, 40 to 56 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.2 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
1500 to 1800 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
P9B30HP2F Image
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Shindengen America - P9B30HP2F

MOSFET from Shindengen America
300 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
440 to 550 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
more info
IXTH10P60 Image
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Littelfuse - IXTH10P60

MOSFET from Littelfuse
-600 V, 135 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-600 V
Drain Source Resistance:
1000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
High-Side Switching, Push Pull Amplifiers, DC Chop...
more info
DMP32D4SW Image
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Diodes Incorporated - DMP32D4SW

MOSFET from Diodes Incorporated
-20 to 20 V, 0.6 to 1.2 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2400 to 4000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.432 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT323
Applications:
Load Switch, Portable Applications, Power Manageme...
more info
C3M0065090D Image
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Wolfspeed - C3M0065090D

MOSFET from Wolfspeed
-8 to 19 V, 35 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 to 36 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
65 to 90 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-3
Applications:
Renewable energy, EV battery chargers, High voltag...
more info
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