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MOSFETs - Page 212

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 212 of 1280
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JSMicro Semiconductor - IRFZ44N-A

MOSFET from JSMicro Semiconductor
60 V, 20 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
36 milli-ohm
Gate Source Voltage:
-20 to 20 V
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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First Silicon - FTK4903DFN56

MOSFET from First Silicon
-40 V, -38 to -60 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-38 to -60 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
10.8 to 20.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
97 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN56
Industry:
Industrial, Commercial
Applications:
Motor Drive, Power Tools, LED Lighting
more info
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Cystech Electronics - MTB120N20Q8-0-TF-G

MOSFET from Cystech Electronics
200 V, 2.1 to 7 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.1 to 7 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
122 to 175 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
18 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
more info
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PFC Device - PRM7R0N12N5

MOSFET from PFC Device
120 V, 65 to 101 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 to 101 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
5.5 to 9.8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
114 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN-5x6
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QM3214S

MOSFET from uPI Semiconductor
30 V, 7 to 9 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
7 to 9 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
10 to 18 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
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Isahaya Electronics - INJ0303AC1

MOSFET from Isahaya Electronics
-12 V, -3000 mA, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3000 mA
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
50 to 180 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
switching
more info
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Oriental Semiconductor - OSG60R180FSF_NB

MOSFET from Oriental Semiconductor
600 V, 12.7 to 20 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.7 to 20 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
140 to 340 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
34 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F_NL
Industry:
Industrial, Commercial
Applications:
Charger, Adapter, Telecom power, Server power, Sol...
more info
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Galaxy Century Microelectronics - BSS123W

MOSFET from Galaxy Century Microelectronics
±20 V, 0.17 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.17 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3500 to 10000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-323
Industry:
Military, Industrial, Commercial
more info
TPCP8012 Image
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Toshiba - TPCP8012

MOSFET from Toshiba
60 V, 26.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
16.2 to 29.1 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.01 W
Package:
PS-8
Applications:
Motor Drivers, Mobile Equipment
more info
RJK1001DPP-A0 Image
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Renesas - RJK1001DPP-A0

MOSFET from Renesas
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.4 to 5.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FPA
Industry:
Commercial, Industrial
more info
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ROHM Semiconductor - RJ1G04BBGTL1

MOSFET from ROHM Semiconductor
40 V, -130 to 130 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-130 to 130 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.4 to 4.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
89 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263AB-3LSHYAD
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
AIMCQ120R080M1T Image
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Infineon Technologies - AIMCQ120R080M1T

MOSFET from Infineon Technologies
1200 V Automotive-Grade SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 to 34 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
84 to 100 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
106 to 211 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-HDSOP-22-3
Industry:
Automotive, Industrial, Commercial
Applications:
On-board charger, DC/DC converter, Auxiliary drive...
more info
SiR820DP-T1-GE3 Image
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Vishay - SiR820DP-T1-GE3

MOSFET from Vishay
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.8 to 6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
27.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
DC/DC converter - Low side switch, Notebook PC, Gr...
more info
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onsemi - NVMFS5C638NLT1G

MOSFET from onsemi
-20 to 20 V, 18.4 to 40.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
133 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.6 to 4.2 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
STW4N150 Image
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STMicroelectronics - STW4N150

MOSFET from STMicroelectronics
-30 to 30 V, 30 to 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
1500 V
Drain Source Resistance:
5000 to 7000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
160 W
Temperature operating range:
DC to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
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