MOSFETs - Page 235

19,197 MOSFETs from 69 manufacturers meet your specification.
19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 235 of 1280
60 V, 23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
9.8 to 23.7 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Package:
TSON Advance
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6.5 to 8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
80 V, -235 to 235 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-235 to 235 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.66 to 2.70 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
189 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263AB-3LSHYAD
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
Automotive Qualified SiC Trench Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
205 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
8.7 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
882 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO263-7
Industry:
Automotive
Applications:
On-board charger, DC/DC converter, Auxiliary drive...
more info
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
130 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.33 to 3.55 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
-20 to 20 V, 12 to 26 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
98 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.7 to 5.1 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK8
Industry:
Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
-30 to 30 V, 113 to 162 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.3 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
1100 to 1380 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
230 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
-100 V, 60 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-52 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
50 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
-12 to 12 V, 4.4 to 8.6 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
60 to 300 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.16 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSOT26
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
-8 to 19 V, 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 to 32 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
65 to 95 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
113.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263-7
Applications:
Renewable energy, EV battery chargers, High voltag...
more info
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.63 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1500 to 3500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89
Industry:
Commercial, Industrial
Applications:
Logic-Level Interfaces (Ideal for TTL and CMOS), S...
more info
25 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
300 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.57 to 1.47 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
158 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK56E
Applications:
Power delivery for V-core, ASIC, DDR, GPU, VGA and...
more info
12 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
2.4 to 6.95 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
3 W
Temperature operating range:
150 Degree C
Industry:
Industrial, Commercial
Applications:
Lithium-ion Battery Protection
more info
20 V , 9.4 to 14.8 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.4 to 14.8 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
50 to 80 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
17.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
14 to 23.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
QFN
Industry:
Commercial, Industrial
Applications:
Power management Units, DC/DC converter, Battery-p...
more info

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