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MOSFETs - Page 285

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 285 of 1280
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Panjit Semiconductor - PJT7839-AU

MOSFET from Panjit Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.25 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
2400 to 13000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Automotive
more info
RM25P60LD Image
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Rectron Semiconductor - RM25P60LD

MOSFET from Rectron Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-25 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
49 to 72 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-252-2L
Industry:
Commercial, Industrial
Applications:
High side switch for full bridge conveter, DC/DC c...
more info
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Yangjie Electronic Technology - YJG85G06AK

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.9 to 5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions, Sync...
more info
18N20J Image
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Goford Semiconductor - 18N20J

MOSFET from Goford Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
136 to 160 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
65.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
Applications:
DC-DC & DC-AC Converters for telecom, industrial a...
more info
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Hunan Jingxin Microelectronics - ESGNQ10R90

MOSFET from Hunan Jingxin Microelectronics
100 V, 15 to 19 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 to 19 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
90 to 180 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
78 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - IRF830APBF

MOSFET from JSMicro Semiconductor
550 V, 2.5 to 4.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 to 4.0 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
2.2 to 2.6 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
33 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
High Frequency Switching Mode Power Supply, Active...
more info
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First Silicon - FTK4407S

MOSFET from First Silicon
-30 V, -11 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
9.0 to 20 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
Battery protection applications, Load switch
more info
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Cystech Electronics - MTA080A02KS6R-0-T1-G

MOSFET from Cystech Electronics
20 V, 1.4 to 1.8 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
1.4 to 1.8 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
90 to 250 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Industrial, Commercial
more info
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PFC Device - PRM4R2N08CT

MOSFET from PFC Device
80 V, 103 to 164 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
103 to 164 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.2 to 9.5 milli-ohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
192 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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Oriental Semiconductor - OSG25R008TF

MOSFET from Oriental Semiconductor
250 V, 73 to 115 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
73 to 115 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
7 to 14 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
219 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification in SMPS, Hard Switching ...
more info
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Galaxy Century Microelectronics - GBLN4405-3DL8

MOSFET from Galaxy Century Microelectronics
±20 V, 14 to 22 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
14 to 22 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
19 to 30 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
23 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3X3-8LC
Industry:
Military, Industrial, Commercial
more info
TJ15S06M3L Image
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Toshiba - TJ15S06M3L

MOSFET from Toshiba
-60 V, 36 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-15 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
33.8 to 63 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
41 W
Package:
DPAK
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
UPA2766T1A Image
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Renesas - UPA2766T1A

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-130 to 130 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.72 to 1.82 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
HVSON
Industry:
Commercial, Industrial
more info
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ROHM Semiconductor - HT8KF6HTB1

MOSFET from ROHM Semiconductor
150 V, -7.0 to 7.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-7.0 to 7.0 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
165 to 263 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.0 to 14 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives
more info
FF2MR12W3M1H_B11 Image
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Infineon Technologies - FF2MR12W3M1H_B11

MOSFET from Infineon Technologies
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
400 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
1.44 to 3.09 milliohm
Gate Source Voltage:
-10 to 23 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 125 Degree C
Industry:
Industrial, Commercial
Applications:
High-frequency switching application, Solar applic...
more info
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