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MOSFETs - Page 318

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 318 of 1280
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PFC Device - PSM7N60CT

MOSFET from PFC Device
600 V, 4.6 to 7.3 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.6 to 7.3 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.5 to 1.42 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
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Oriental Semiconductor - OSG65R020H4T3F

MOSFET from Oriental Semiconductor
650 V, 70 to 110 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 to 110 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
18 to 100 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
637 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
PC power, LED lighting, Telecom power, Server powe...
more info
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Galaxy Century Microelectronics - GBLH6601-5DL8

MOSFET from Galaxy Century Microelectronics
±20 V, -12 to 16 A Dual N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-12 to 16 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
40 to 125 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
26 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5X6-8LC
Industry:
Military, Industrial, Commercial
Applications:
Synchronous Rectification, Motor Control, Protable...
more info
SSM6N36FE Image
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Toshiba - SSM6N36FE

MOSFET from Toshiba
20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
460 to 1520 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-563
Industry:
Commercial, Industrial
Applications:
High-Speed Switching Applications
more info
RJK03M2DPA Image
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Renesas - RJK03M2DPA

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.3 to 3.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
HP8ME5TB1 Image
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ROHM Semiconductor - HP8ME5TB1

MOSFET from ROHM Semiconductor
100 V N/P-Channel MOSFET for Switching Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Continous Drain Current:
-8.5 to 8.5 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
303 milli-ohm
Power Dissipation:
20 W
Applications:
Switching and Motor Drive Applications
more info
IRFHS9351TRPBF Image
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Infineon Technologies - IRFHS9351TRPBF

MOSFET from Infineon Technologies
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
135 to 290 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TSDSON-6
Industry:
Industrial, Commercial
Applications:
Charge and discharge switch for battery applicatio...
more info
SiR878BDP-T1-RE3 Image
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Vishay - SiR878BDP-T1-RE3

MOSFET from Vishay
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42.5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
12 to 17 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
62.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
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onsemi - STTFS015N10MCL

MOSFET from onsemi
-20 to 20 V, 19 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
10.6 to 19.8 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
WDFN-8
Industry:
Commercial, Industrial
Applications:
Load Switches, Synchronous Rectifier, DC Motor Con...
more info
STWA12N120K5 Image
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STMicroelectronics - STWA12N120K5

MOSFET from STMicroelectronics
-30 to 30 V, 44.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
620 to 690 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Applications:
Switching applications
more info
IXTY15P15T Image
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Littelfuse - IXTY15P15T

MOSFET from Littelfuse
-150 V, 48 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-15 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
240 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
DMP2040UND Image
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Diodes Incorporated - DMP2040UND

MOSFET from Diodes Incorporated
20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
28 to 60 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 ºC
Package:
PowerDI3333-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
APL1001J Image
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Microchip Technology - APL1001J

MOSFET from Microchip Technology
1000 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
600 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
520 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Industry:
Commercial, Military
more info
PMZ950UPEL Image
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Nexperia - PMZ950UPEL

MOSFET from Nexperia
20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.5 to -0.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1020 to 5000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.36 to 2.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT883
Applications:
Relay driver, High-speed line driver, High-side lo...
more info
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Panasonic Corporation - FC4B21320L

MOSFET from Panasonic Corporation
8 V, Dual, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
27 to 115 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.34 to 0.90 W
Package:
CSP
more info
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