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MOSFETs - Page 34

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 34 of 1280
BST25T2P4K01-VC Image
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ROHM Semiconductor - BST25T2P4K01-VC

MOSFET from ROHM Semiconductor
1200 V, 17 to 25 A, 152 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
17 to 25 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
62 to 164 milli-ohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
152 W
Temperature operating range:
-40 to 175 Degree C
Package:
HSDIP20
Industry:
Automotive, Industrial, Commercial
Applications:
Inverter, Converter, (Hybrid) electrical vehicles ...
more info
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Infineon Technologies - ISC012N04NM7V

MOSFET from Infineon Technologies
40 V, 35 to 219 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 to 219 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.97 to 1.25 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
3 to 115 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8
Industry:
Industrial, Commercial
more info
SiHK050N65E-T1-GE3 Image
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Vishay - SiHK050N65E-T1-GE3

MOSFET from Vishay
650 V E Series Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
29 to 45 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.048 to 0.055 Ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
278 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 10 x 12
Industry:
Industrial, Commercial
Applications:
Server and telecom power supplies, Switch mode pow...
more info
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onsemi - NTMFS0D5N04XLT1G

MOSFET from onsemi
-20 to 20 V, 127 nC, N-Channel Enhancement Mode, MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
322 to 455 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.39 to 0.78 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
194 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFNW5
Industry:
Commercial, Industrial
Applications:
High Switching Frequency DC-DC Conversion, Synchro...
more info
ADP360120W3 Image
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STMicroelectronics - ADP360120W3

MOSFET from STMicroelectronics
1200 V SiC MOSFET for Electric Vehicle Traction Inverters

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
379 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
3.45 milliohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
704 W
Temperature operating range:
-40 to 175 Degree C
Package:
ACEPACK DRIVE
Industry:
Automotive
Applications:
Main inverter (electric traction)
more info
P4B60HP2F Image
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Shindengen America - P4B60HP2F

MOSFET from Shindengen America
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1600 to 1900 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
150 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
more info
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Littelfuse - MCL10P1200LB

MOSFET from Littelfuse
1200 V, 13.5 to 19.5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
13.5 to 19.5 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 230 milli-ohm
Gate Source Voltage:
±30 V
Temperature operating range:
-55 to 150 Degree C
Package:
SMD
Industry:
Industrial, Commercial
Applications:
Solar Inverters, High Voltage DC/DC converters, Mo...
more info
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Mitsubishi Electric - FMF300DXZ-34B

MOSFET from Mitsubishi Electric
1700, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
300 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
4.9 to 7.16 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1230 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
AC Motor control, Motion servo control, Power Supp...
more info
DMWS120H100SM4 Image
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Diodes Incorporated - DMWS120H100SM4

MOSFET from Diodes Incorporated
1200 V N-Channel Enhancement Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
37.2 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohms
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO247-4
Applications:
Data center and telecom power supplies, Industrial...
more info
EDB010M12TM4 Image
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Wolfspeed - EDB010M12TM4

MOSFET from Wolfspeed
1200 V, 160 A, Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
160 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
9.3 to 22.3 milli-ohm
Gate Source Voltage:
-4 to 15 V
Temperature operating range:
-40 to 175 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
Traction Inverters
more info
APT8020LLL(G) Image
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Microchip Technology - APT8020LLL(G)

MOSFET from Microchip Technology
800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
694 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-264
Industry:
Commercial, Military
more info
NSF040120D7A1-Q Image
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Nexperia - NSF040120D7A1-Q

MOSFET from Nexperia
Automotive-Qualified N-Channel SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 to 54 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 70 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial, Electric Vehicle
Applications:
Onboard charger, DC-DC converter, Auxiliary drives
more info
AOM040V120X3Q Image
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Alpha & Omega Semiconductor - AOM040V120X3Q

MOSFET from Alpha & Omega Semiconductor
1200 V, 32 to 46 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
32 to 46 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 80 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
164 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial, Commercial
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info
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Navitas Semiconductor - G3F40MT12K

MOSFET from Navitas Semiconductor
1200 V, 28 to 55 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 to 55 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 71 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
234 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Industrial, Commercial
Applications:
xEV-OBC and DC-DC, EV Fast Charging Infrastructure...
more info
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Panasonic Corporation - FK4B0617ZL

MOSFET from Panasonic Corporation
60 V, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
15 to 31 Milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
1.79 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Automotive
Applications:
Automotive Switching Circuit
more info
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