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MOSFETs - Page 386

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 386 of 1280
G18P03D3 Image
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Goford Semiconductor - G18P03D3

MOSFET from Goford Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-28 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
7.5 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3X3-8L
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESN409

MOSFET from Hunan Jingxin Microelectronics
-60 V, -22 to -28 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-22 to -28 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
27.0 to 38.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3x3-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - NDT2955

MOSFET from JSMicro Semiconductor
-60 V, -4.1 to -7.0 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.1 to -7.0 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
0.055 to 0.065 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
10.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Industry:
Industrial, Commercial
Applications:
Load Switch
more info
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First Silicon - FTK2206DFN22

MOSFET from First Silicon
20 V, 9.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.0 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
9.1 to 29 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN22
Industry:
Industrial, Commercial
Applications:
Load Switches, DC/DC Conversion, Motor Drives
more info
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Cystech Electronics - MTB450P10KN3-0-T1-G

MOSFET from Cystech Electronics
-100 V, -0.7 to -0.9 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.7 to -0.9 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
440 to 730 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
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Oriental Semiconductor - OSG65R130K7T3ZAF

MOSFET from Oriental Semiconductor
650 V, 15.8 to 25 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15.8 to 25 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
99 to 248 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
178 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263-7L
Industry:
Automotive, Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
SSM3K36MFV Image
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Toshiba - SSM3K36MFV

MOSFET from Toshiba
20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
460 to 1520 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-723
Applications:
High-Speed Switching Applications
more info
RQK0603CGDQA Image
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Renesas - RQK0603CGDQA

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
212 to 348 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RTL020P02FRA Image
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ROHM Semiconductor - RTL020P02FRA

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
100 to 250 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Commercial, Automotive
Applications:
Switching
more info
BSZ215C H Image
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Infineon Technologies - BSZ215C H

MOSFET from Infineon Technologies
-20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.2 to 5.1 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
41 to 310 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TSDSON-8
Industry:
Automotive
Applications:
Automotive, DC-DC, Motor control, Onboard charger
more info
SiZ980DT-T1-GE3 Image
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Vishay - SiZ980DT-T1-GE3

MOSFET from Vishay
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
14.6 to 60 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.1 to 10 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
2.4 to 66 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAIR 6 x 5
Industry:
Industrial, Commercial
Applications:
CPU core power, Computer / server peripherals, POL...
more info
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onsemi - NVMYS021N10MCL

MOSFET from onsemi
-20 to 20 V, 100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
19 to 33 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
49 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK-4
Industry:
Automotive, Industrial, Commercial
more info
STP2N105K5 Image
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STMicroelectronics - STP2N105K5

MOSFET from STMicroelectronics
-30 to 30 V, 10 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.5 A
Drain Source Breakdown Voltage:
1050 V
Drain Source Resistance:
6000 to 8000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
IXTH90N20X3 Image
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Littelfuse - IXTH90N20X3

MOSFET from Littelfuse
200 V N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
90 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
12 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
390 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
DMP22D4UFA Image
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Diodes Incorporated - DMP22D4UFA

MOSFET from Diodes Incorporated
20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.33 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1200 to 5000 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.4 W
Temperature operating range:
-55 to 150 ºC
Package:
X2-DFN0806-3
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
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