1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs - Page 400

19,197 MOSFETs from 69 manufacturers meet your specification.
Filters (0)
19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 400 of 1280
Download Datasheet  Request Quote  Product Details

JSMicro Semiconductor - JSM3205Z

MOSFET from JSMicro Semiconductor
60 V, 65 to 85 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 to 85 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7.5 to 8.5 milli-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
200 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
 Request Quote  Product Details

First Silicon - FTK2301

MOSFET from First Silicon
-20 V, -2.3 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
69 to 150 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.57 to 0.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
Download Datasheet  Request Quote  Product Details

Cystech Electronics - MTE020A10RH8-0-T6-G

MOSFET from Cystech Electronics
100 V, 18.5 to 29.3 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
18.5 to 29.3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
26 to 36 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
56 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5×6
Industry:
Industrial, Commercial
more info
SSM3J371R Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J371R

MOSFET from Toshiba
-20 V, 10.4 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
46 to 150 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2 W
Package:
SOT-323
Applications:
Power Management Switches
more info
UPA1855GR Image
Download Datasheet  Request Quote  Product Details

Renesas - UPA1855GR

MOSFET from Renesas
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
17 to 29 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSSOP
Industry:
Commercial, Industrial
more info
RTF016N05FRA Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RTF016N05FRA

MOSFET from ROHM Semiconductor
45 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.6 to 1.6 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
140 to 280 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323T
Industry:
Commercial, Automotive
Applications:
Switching
more info
F4-23MR12W1M1_B76 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - F4-23MR12W1M1_B76

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22.5 to 33 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial, Automotive
Applications:
Welding, DC charger for EV, DC/DC converter, High ...
more info
SiZ342DT-T1-GE3 Image
Download Datasheet  Request Quote  Product Details

Vishay - SiZ342DT-T1-GE3

MOSFET from Vishay
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
12.4 to 30 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
8.4 to 15.3 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
2.4 to 16.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAIR 3 x 3
Industry:
Industrial, Commercial
Applications:
Synchronous buck - Battery charging - Computer sys...
more info
Download Datasheet  Request Quote  Product Details

onsemi - HUF75321P3

MOSFET from onsemi
-20 to 20 V, 55 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
28 to 34 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
93 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
more info
STP25N80K5 Image
Download Datasheet  Request Quote  Product Details

STMicroelectronics - STP25N80K5

MOSFET from STMicroelectronics
-30 to 30 V, 40 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
190 to 260 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
IXFX240N25X3 Image
Download Datasheet  Request Quote  Product Details

Littelfuse - IXFX240N25X3

MOSFET from Littelfuse
250 V N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
240 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 PLUS
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
DMP2078LCA3 Image
Download Datasheet  Request Quote  Product Details

Diodes Incorporated - DMP2078LCA3

MOSFET from Diodes Incorporated
20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
64 to 600 milliohm
Gate Source Voltage:
-12 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 ºC
Package:
X4-DSN1006-3
Applications:
Battery Management, Load Switch, Battery Protectio...
more info
APT50M50JVR Image
Download Datasheet  Request Quote  Product Details

Microchip Technology - APT50M50JVR

MOSFET from Microchip Technology
500 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
77 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
50 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
700 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Industry:
Commercial, Military
more info
PXP6R1-30QL Image
Download Datasheet  Request Quote  Product Details

Nexperia - PXP6R1-30QL

MOSFET from Nexperia
-25 to 25 V, 38.2 to 116.7 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-22.1 to -8.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
5 to 9.9 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.8 to 50 W
Temperature operating range:
-55 to 150 Degree C
Package:
MLPAK33
Industry:
Commercial, Industrial
Applications:
High-side load switch, Battery management, DC-to-D...
more info
 Request Quote  Product Details

Advanced Power Electronics Corp - AP2P028EN2

MOSFET from Advanced Power Electronics Corp
2.4 W, -20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to -7.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
28 to 50 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN-2x2
Industry:
Industrial, Commercial
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

More

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.