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MOSFETs - Page 437

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 437 of 1280
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Hunan Jingxin Microelectronics - ES10N65D

MOSFET from Hunan Jingxin Microelectronics
650 V, 8 to 10 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 10 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.87 to 1.05 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
178 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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First Silicon - FTK3139E

MOSFET from First Silicon
-20 V, -0.66 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.66 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
520 to 950 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
150 mW
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-523
Industry:
Industrial, Commercial
Applications:
Load/Power Switching, Interfacing, Logic Switching...
more info
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Cystech Electronics - MTB012P06KE3-0-UB-G

MOSFET from Cystech Electronics
-60 V, -36 to -57 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-36 to -57 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
13.3 to 27.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
SSM6J422TU Image
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Toshiba - SSM6J422TU

MOSFET from Toshiba
-20 V, 12.8 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
36.9 to 99.6 Milliohm
Gate Source Voltage:
-8 to 6 V
Power Dissipation:
1 W
Package:
SOT-363
Applications:
Power Management Switches
more info
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Renesas - 2SK3404

MOSFET from Renesas
30 V, -40 to 40 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
11 to 21 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Commercial, Industrial
Applications:
DC/DC converters
more info
RRR030P03HZG Image
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ROHM Semiconductor - RRR030P03HZG

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
55 to 125 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
Switching
more info
FS45MR12W1M1_B11 Image
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Infineon Technologies - FS45MR12W1M1_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
45 to 66 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
SiUD406ED-T1-GE3 Image
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Vishay - SiUD406ED-T1-GE3

MOSFET from Vishay
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1170 to 1850 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 0806
Industry:
Industrial, Commercial
Applications:
Load switch, High speed switching, DC/DC converter...
more info
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onsemi - FDPF035N06B-F154

MOSFET from onsemi
-20 to 20 V, 60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
88 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.91 to 3.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
46.3 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220 FULLPACK, 3-LEAD (ULTRA NARROW LEAD)
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification for ATX / Server / Telec...
more info
STFW4N150 Image
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STMicroelectronics - STFW4N150

MOSFET from STMicroelectronics
-30 to 30 V, 30 to 50 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
1500 V
Drain Source Resistance:
5000 to 7000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
63 W
Temperature operating range:
DC to 150 Degree C
Package:
TO-3PF
Applications:
Switching applications
more info
IXFH170N15X3 Image
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Littelfuse - IXFH170N15X3

MOSFET from Littelfuse
150 V, 122 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
170 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
6.7 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
520 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
DMP21D6UFD Image
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Diodes Incorporated - DMP21D6UFD

MOSFET from Diodes Incorporated
20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.6 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
700 to 3000 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 ºC
Package:
X1-DFN1212-3
Applications:
DC-DC Converters, Power management functions
more info
APT56M50L Image
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Microchip Technology - APT56M50L

MOSFET from Microchip Technology
500 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
100 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
780 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-264
Industry:
Commercial
Applications:
PFC and other boost converter, Buck converter, Two...
more info
PXP012-30QL Image
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Nexperia - PXP012-30QL

MOSFET from Nexperia
-25 to 25 V, 14.1 to 43.4 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-15.2 to -5.7 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
11.1 to 20.7 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.7 to 32 W
Temperature operating range:
-55 to 150 Degree C
Package:
MLPAK33
Industry:
Commercial, Industrial
Applications:
High-side load switch, Battery management, DC-to-D...
more info
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Advanced Power Electronics Corp - AP3N020YT

MOSFET from Advanced Power Electronics Corp
3.12 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.8 to 10 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
20 to 32 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.12 W
Temperature operating range:
-55 to 150 Degree C
Package:
PMPAK-3x3
Industry:
Industrial, Commercial
more info
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