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MOSFETs - Page 444

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 444 of 1280
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Hunan Jingxin Microelectronics - ES138KA

MOSFET from Hunan Jingxin Microelectronics
60 V, 0.41 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.41 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1.25 to 4.5 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.417 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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First Silicon - FTK3401

MOSFET from First Silicon
-30 V, -3.2 to -4 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.2 to -4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
50 to 85 milli-ohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management
more info
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Cystech Electronics - MTE011N10BRFP-0-UB-S

MOSFET from Cystech Electronics
100 V, 8.8 to 34 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.8 to 34 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
11 to 14.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Industry:
Industrial, Commercial
more info
SSM3K116TU Image
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Toshiba - SSM3K116TU

MOSFET from Toshiba
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.2 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
75 to 135 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Package:
SOT-323
Applications:
High Speed Switching Applications
more info
N0436N Image
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Renesas - N0436N

MOSFET from Renesas
40 V, -56 to 56 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-56 to 56 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.9 to 4.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
87.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
Applications:
For high current switching
more info
RD3P130SPFRA Image
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ROHM Semiconductor - RD3P130SPFRA

MOSFET from ROHM Semiconductor
-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-13 to 13 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
135 to 230 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
F4-23MR12W1M1P_B11 Image
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Infineon Technologies - F4-23MR12W1M1P_B11

MOSFET from Infineon Technologies
1200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22.5 to 33 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
SiSH625DN-T1-GE3 Image
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Vishay - SiSH625DN-T1-GE3

MOSFET from Vishay
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-35 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
5.6 to 11 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Adapter switch, Load switch
more info
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onsemi - FQPF2N80

MOSFET from onsemi
-30 to 30 V, 800 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.5 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
4900 to 6300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
more info
STFU15N80K5 Image
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STMicroelectronics - STFU15N80K5

MOSFET from STMicroelectronics
-30 to 30 V, 32 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
300 to 375 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP ultra narrow leads
Applications:
Switching applications
more info
IXFA44N25X3 Image
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Littelfuse - IXFA44N25X3

MOSFET from Littelfuse
250 V, 33 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
44 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
40 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
240 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
DMP210DUFB4 Image
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Diodes Incorporated - DMP210DUFB4

MOSFET from Diodes Incorporated
20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
5000 to 15000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 ºC
Package:
X2-DFN1006-3
Applications:
DC-DC Converters, Power Management Functions
more info
APT5024BVFR Image
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Microchip Technology - APT5024BVFR

MOSFET from Microchip Technology
500 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
240 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
280 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Military
more info
PSMN017-80PS Image
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Nexperia - PSMN017-80PS

MOSFET from Nexperia
-20 to 20 V, 22 to 26 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 to 50 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
13.7 to 40.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
103 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Industry:
Automotive, Commercial, Industrial
Applications:
DC-to-DC converters, Load switching, Motor control...
more info
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Advanced Power Electronics Corp - AP3N020P

MOSFET from Advanced Power Electronics Corp
17.8 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14.7 to 23.3 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
20 to 30 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
17.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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