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MOSFETs - Page 661

19,201 MOSFETs from 69 manufacturers meet your specification.
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19,201 MOSFETs from 69 Manufacturers
19,201 Products from 69 Manufacturers
Page 661 of 1281
SIR500DP-T1-RE3 Image
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Vishay - SIR500DP-T1-RE3

MOSFET from Vishay
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
350.8 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.39 to 0.68 milliohm
Gate Source Voltage:
-12 to 16 V
Power Dissipation:
104.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
DC/DC converter, POL, Synchronous rectification, B...
more info
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onsemi - NTBLS0D7N06C

MOSFET from onsemi
-20 to 20 V, 60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
470 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
0.56 to 1.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
314 W
Temperature operating range:
-55 to 150 Degree C
Package:
H-PSOF8L
Industry:
Industrial, Commercial
Applications:
Power Tools, Battery Operated Vacuums, UAV/Drones,...
more info
STP3NK60Z Image
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STMicroelectronics - STP3NK60Z

MOSFET from STMicroelectronics
-30 to 30 V, 11.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
3200 to 3600 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
IXFK66N85X Image
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Littelfuse - IXFK66N85X

MOSFET from Littelfuse
-30 to 30 V, 230 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
66 A
Drain Source Breakdown Voltage:
850 V
Drain Source Resistance:
65 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
1250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-264P
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
ZVN2120G Image
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Diodes Incorporated - ZVN2120G

MOSFET from Diodes Incorporated
-20 to 20 V, , N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.32 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
10000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT223
Applications:
DC-DC Converters, Solenoids / Relay Driver for Aut...
more info
APT20M34SLL Image
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Microchip Technology - APT20M34SLL

MOSFET from Microchip Technology
200 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
74 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
34 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
403 W
Temperature operating range:
-55 to 150 Degree C
Package:
D3PAK
Industry:
Commercial, Military
more info
NX3008PBK Image
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Nexperia - NX3008PBK

MOSFET from Nexperia
-8 to 8 V, 0.55 to 0.72 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.23 to -0.145 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2800 to 7800 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.35 to 1.14 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Industry:
Automotive, Commercial, Industrial
Applications:
Relay driver, High-speed line driver, Low-side loa...
more info
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Advanced Power Electronics Corp - AP6N021YT

MOSFET from Advanced Power Electronics Corp
60 V, 3.57 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.3 to 25.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 to 45 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.57 W
Temperature operating range:
-55 to 150 Degree C
Package:
PMPAK
Industry:
Industrial, Commercial
more info
PJP60R980E Image
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Panjit Semiconductor - PJP60R980E

MOSFET from Panjit Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
890 to 980 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
58 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Military
more info
RM2306E Image
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Rectron Semiconductor - RM2306E

MOSFET from Rectron Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.3 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
26 to 52 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.39 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Power Management in Note book, Portable Equipment,...
more info
MTE040P10RV8-0-T6-G Image
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Cystech Electronics - MTE040P10RV8-0-T6-G

MOSFET from Cystech Electronics
-100 V P-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.2 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
50 to 70 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
43 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3×3
Industry:
Industrial, Commercial
more info
TK190A65Z Image
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Toshiba - TK190A65Z

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
158 to 190 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Power Supplies
more info
RCX200N20 Image
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ROHM Semiconductor - RCX200N20

MOSFET from ROHM Semiconductor
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-20 to 20 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
100 to 310 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
48 W
Temperature operating range:
150 Degree C
Package:
TO-220FM
Industry:
Automotive
Applications:
Switching Power Supply, Automotive Motor Drive, Au...
more info
IRHNS597Z60 Image
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Infineon Technologies - IRHNS597Z60

MOSFET from Infineon Technologies
-30 V, 240 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-56 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
Industry:
Space, Military
more info
SiR188LDP-T1-RE3 Image
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Vishay - SiR188LDP-T1-RE3

MOSFET from Vishay
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
93.6 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.1 to 5.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
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