MOSFETs - Page 74

19,197 MOSFETs from 69 manufacturers meet your specification.
19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 74 of 1280
-20 to 20 V, 24 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-9 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
12 to 22.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Switching applications
more info
525 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
525 V
Drain Source Resistance:
2500 to 3200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
more info
-200 V, 103 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-48 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
462 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
-20 to 20 V, 5.2 to 11 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.9 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
50 to 95 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
1200 V SiC Half-Bridge Module

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
4.1 to 7.2 milli-ohm
Gate Source Voltage:
-4 to 15 V
Power Dissipation:
584 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial, Electric Vehicle
Applications:
EV Chargers, High-Efficiency Converters / Inverter...
more info
90 V, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 to 0.36 A
Drain Source Breakdown Voltage:
90 V
Drain Source Resistance:
3200 to 6000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.49 to 1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89, SOT-23
Industry:
Commercial, Industrial
Applications:
Normally-on switches, Battery operated systems, Co...
more info
20 V, P-channel Trench MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.9 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
500 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN0603-3 (SOT8013)
Applications:
Battery switch, High-speed line driver, High-side ...
more info
12 V Common-Drain Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
2.3 milli-ohm
Gate Source Voltage:
8 V
Power Dissipation:
3.1 W
Applications:
Bbattery protection switch, mobile device battery ...
more info
1200 V, 5 to 10 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 to 10 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
295 to 489 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
64 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Industrial, Commercial
Applications:
Auxiliary Power Supply, Solar Inverters, UPS, High...
more info
-20 V, P-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
80 to 230 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.54 W
Temperature operating range:
150 Degree C
Package:
WSSMini6-F1
Industry:
Industrial, Commercial
more info
3300 V, 17 to 33 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 to 33 A
Drain Source Breakdown Voltage:
3300 V
Drain Source Resistance:
120 to 251 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
366 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar string inverters, EV fast chargers, Pulse Po...
more info
100 V, 1.7 to 3 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.7 to 3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
112 to 145 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.38 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.6 to 7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
QFN
Industry:
Commercial, Industrial
Applications:
Power management Units, DC/DC converter, Battery-p...
more info
750 V, N-Channel Enhancement Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
86 to 106 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
9 to 19.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
375 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial, Commercial
Applications:
EV charging, PV inverters, Switch mode power suppl...
more info
30 V, 7.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.5 to 12.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN56
Industry:
Commercial, Industrial
Applications:
Vcore / MB, POL Application, SMPS 2nd SR
more info

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