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MOSFETs - Page 767

19,201 MOSFETs from 69 manufacturers meet your specification.
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19,201 MOSFETs from 69 Manufacturers
19,201 Products from 69 Manufacturers
Page 767 of 1281
QH8MA3 Image
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ROHM Semiconductor - QH8MA3

MOSFET from ROHM Semiconductor
-30 to 30 V, 7.2 to 10 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
22 to 72 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Industrial
Applications:
Switching
more info
IMZA65R048M1H Image
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Infineon Technologies - IMZA65R048M1H

MOSFET from Infineon Technologies
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
48 to 64 Milliohm
Gate Source Voltage:
-5 to 23 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO247-4
Industry:
Industrial, Commercial, Automotive
Applications:
SMPS, UPS(uninterruptable power supplies), Solar P...
more info
SiHG40N60E Image
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Vishay - SiHG40N60E

MOSFET from Vishay
-30 to 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
65 to 75 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
329 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247AC
Applications:
Server and telecom power supplies, Switch mode pow...
more info
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onsemi - NVTFS012P03P8ZTAG

MOSFET from onsemi
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11.7 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8.3 to 20 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.4 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Automotive, Industrial, Commercial
Applications:
Battery Management, Protection, Power Load Switch
more info
STF4N62K3 Image
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STMicroelectronics - STF4N62K3

MOSFET from STMicroelectronics
-30 to 30 V, 22 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.8 A
Drain Source Breakdown Voltage:
620 V
Drain Source Resistance:
1700 to 2000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
IXFP230N075T2 Image
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Littelfuse - IXFP230N075T2

MOSFET from Littelfuse
-20 to 20 V, 178 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
230 A
Drain Source Breakdown Voltage:
75 V
Drain Source Resistance:
4.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
480 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Applications:
Automotive - Motor Drives - 12V Power Bus - ABS Sy...
more info
DMTH4014LPD Image
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Diodes Incorporated - DMTH4014LPD

MOSFET from Diodes Incorporated
40 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
10.6 to 43.6 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
11.8 to 25 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.41 to 42.8 W
Temperature operating range:
-55 to 175 ºC
Package:
PowerDI5060-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
2N7002 Image
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Microchip Technology - 2N7002

MOSFET from Microchip Technology
60 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.115 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7500 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
0.36 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Medical
Applications:
Motor controls, Converters, Amplifiers, Switches, ...
more info
PMN48XPA Image
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Nexperia - PMN48XPA

MOSFET from Nexperia
20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.1 to -2.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
48 to 82 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.53 to 6.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT457
Industry:
Automotive, Commercial, Industrial
Applications:
Relay driver, High-speed line driver, Low-side loa...
more info
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Advanced Power Electronics Corp - AP9593GS

MOSFET from Advanced Power Electronics Corp
-100 V, -43 to -68 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-43 to -68 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
24 to 30 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
208.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
more info
PJW5N06A-AU Image
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Panjit Semiconductor - PJW5N06A-AU

MOSFET from Panjit Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
53 to 90 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.72 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-223
Industry:
Industrial, Military
more info
TPH3R70APL1 Image
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Toshiba - TPH3R70APL1

MOSFET from Toshiba
100 V, 67 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
170 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.1 to 6.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
210 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
SH8M41 Image
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ROHM Semiconductor - SH8M41

MOSFET from ROHM Semiconductor
-80 to 80 V, 6.6 to 11.5 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.4 to 3.4 A
Drain Source Breakdown Voltage:
-80 to 80 V
Drain Source Resistance:
90 to 310 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial
Applications:
Switching
more info
IMBF170R450M1 Image
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Infineon Technologies - IMBF170R450M1

MOSFET from Infineon Technologies
1700 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.8 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
450 to 917 Milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
107 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO263-7
Industry:
Industrial, Commercial, Automotive
Applications:
Energy generation o Solar string inverter and sola...
more info
SiHG25N50E Image
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Vishay - SiHG25N50E

MOSFET from Vishay
-30 to 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
125 to 145 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247AC
Applications:
Hard switched topologies, Power factor correction ...
more info
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