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MOSFETs - Page 766

19,201 MOSFETs from 69 manufacturers meet your specification.
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19,201 MOSFETs from 69 Manufacturers
19,201 Products from 69 Manufacturers
Page 766 of 1281
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Advanced Power Electronics Corp - AP9474GM-HF

MOSFET from Advanced Power Electronics Corp
60 V, 9.6 to 12.8 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.6 to 12.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
10.5 to 13 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Industry:
Industrial, Commercial
more info
PJP7NA60 Image
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Panjit Semiconductor - PJP7NA60

MOSFET from Panjit Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1020 to 1200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
145 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Military
more info
2SK4115 Image
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Toshiba - 2SK4115

MOSFET from Toshiba
900 V, 45 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1600 to 2000 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
150 W
Package:
TO-3P
Industry:
Industrial, Military, Automotive
Applications:
Switching Regulator Applications
more info
HP8M31 Image
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ROHM Semiconductor - HP8M31

MOSFET from ROHM Semiconductor
-60 to 60 V, 12.3 to 38 nC, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-8.5 to 8.5 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
46 to 80 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
7 W
Temperature operating range:
150 Degree C
Package:
HSOP8D
Industry:
Industrial
Applications:
motor
more info
IMZA65R072M1H Image
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Infineon Technologies - IMZA65R072M1H

MOSFET from Infineon Technologies
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
28 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
72 to 94 Milliohm
Gate Source Voltage:
-5 to 23 V
Power Dissipation:
96 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO247-4
Industry:
Industrial, Commercial, Automotive
Applications:
SMPS, UPS(uninterruptable power supplies), Solar P...
more info
SiHG15N80AEF Image
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Vishay - SiHG15N80AEF

MOSFET from Vishay
-30 to 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
305 to 350 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
156 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247AC
Applications:
Server and telecom power supplies, Switch mode pow...
more info
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onsemi - NTHD4102PT1G

MOSFET from onsemi
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
64 to 170 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
ChipFET-8
Industry:
Industrial, Commercial
Applications:
Optimized for Battery and Load Management Applicat...
more info
STI13NM60N Image
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STMicroelectronics - STI13NM60N

MOSFET from STMicroelectronics
- 25 to 25 V, 27 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
280 to 360 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 150 Degree C
Package:
I2PAK
Applications:
Switching applications
more info
IXTQ200N10T Image
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Littelfuse - IXTQ200N10T

MOSFET from Littelfuse
-30 to 30 V, 152 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
5.5 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
550 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-3P
Applications:
Automotive - Motor Drives - 12V Battery - ABS Syst...
more info
DMTH6005LFG Image
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Diodes Incorporated - DMTH6005LFG

MOSFET from Diodes Incorporated
60 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19.7 to 100 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.1 to 7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.38 to 75 W
Temperature operating range:
-55 to 175 ºC
Package:
PowerDI3333-8
Applications:
Synchronous Rectification, Motor Control, DC-DC Co...
more info
VN10K Image
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Microchip Technology - VN10K

MOSFET from Microchip Technology
60 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.31 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5000 to 7500 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Medical
Applications:
Motor controls, Converters, Amplifiers, Switches, ...
more info
PMV450ENEA Image
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Nexperia - PMV450ENEA

MOSFET from Nexperia
60 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 to 0.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
300 to 727 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.323 to 0.554 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Industry:
Automotive, Commercial, Industrial
Applications:
Relay driver, High-speed line driver, Low-side loa...
more info
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Advanced Power Electronics Corp - AP9870GH-HF

MOSFET from Advanced Power Electronics Corp
60 V, 11.5 to 18 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11.5 to 18 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
42 to 60 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
27.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
PJW3N10A Image
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Panjit Semiconductor - PJW3N10A

MOSFET from Panjit Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.2 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
284 to 320 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Industry:
Industrial, Military
more info
TPN4R712MD Image
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Toshiba - TPN4R712MD

MOSFET from Toshiba
-20 V, 65 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-36 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
3.8 to 8.1 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
42 W
Package:
TSON Advance
Industry:
Commercial, Industrial
Applications:
Lithium-Ion Secondary Batteries, Power Management ...
more info
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