MOSFETs - Page 91

19,197 MOSFETs from 69 manufacturers meet your specification.
19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 91 of 1280
-30 to 30 V, 50.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
275 to 330 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 long leads
Applications:
Switching applications
more info
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
120 to 1650 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
more info
-85 V, 180 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-96 A
Drain Source Breakdown Voltage:
-85 V
Drain Source Resistance:
13 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
298 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263 AA
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
-25 to 25 V, 16.2 to 33.7 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
10000 to 25000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
19.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
U-DFN2523-6
Applications:
Load Switch, Power Management Functions, DC-DC Con...
more info
650 V, 120 A, MOSFET

Product Specs

Technology:
SiC
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
15 milli-ohm
Temperature operating range:
175 Degree C
Industry:
Industrial, Commercial
Applications:
Power Supplies, Server/Telecom, EV-Charging System...
more info
-90 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 A
Drain Source Breakdown Voltage:
-90 V
Drain Source Resistance:
6000 to 15000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Motor controls, Converters, Amplifiers, Switches, ...
more info
80 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
286 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
3 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
340 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK88
Applications:
Hot swap, Load switch, Soft start, E-fuse, Telecom...
more info
1200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40.3 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
65 to 90 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
187.5 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Automotive
Applications:
xEV Charger, Electric Vehicle Supply Equipment (EV...
more info
1200 V, 33 to 63 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
34 to 63 milli-ohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
263 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Industrial, Commercial
Applications:
xEV-OBC and DC-DC, EV Fast Charging Infrastructure...
more info
20 V, N-Channel Depletion Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
80 to 300 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.54 W
Temperature operating range:
150 Degree C
Package:
WSSMini6-F1
Industry:
Industrial, Commercial
more info
1200 V, 5 to 10 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 to 10 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
350 to 499 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
100 V, 5.1 to 8.1 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.1 to 8.1 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
135 to 145 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
more info
-50 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.13 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-323
Industry:
Commercial, Industrial
Applications:
Signal processing, Battery management Drivers, Log...
more info
N Channel Enhancement Mode SiC MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
53 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
29 milliohm
Gate Source Voltage:
25 V
Power Dissipation:
385 W
Temperature operating range:
-55 to 175 degree C
Package:
TO-247-4L
Industry:
Automotive, Industrial
Applications:
Power factor correction modules, Switch mode power...
more info
30 V, 7.7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7.5 to 14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252 (D-PAK)
Industry:
Commercial, Industrial
Applications:
MB / VGA / Vcor, POL Applications, SMPS 2nd SR
more info

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