1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs - Page 953

19,213 MOSFETs from 69 manufacturers meet your specification.
Filters (0)
19,213 MOSFETs from 69 Manufacturers
19,213 Products from 69 Manufacturers
Page 953 of 1281
STD1NK60T4 Image
Download Datasheet  Request Quote  Product Details

STMicroelectronics - STD1NK60T4

MOSFET from STMicroelectronics
-30 to 30 V, 7 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
7300 to 8500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Low power battery chargers, Swith mode low power s...
more info
IXTK 88N30P Image
Download Datasheet  Request Quote  Product Details

Littelfuse - IXTK 88N30P

MOSFET from Littelfuse
-20 to 20 V, 180 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
88 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
40 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
600 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
DC-DC Converters, Switch-Mode and Resonant-Mode Po...
more info
DMN2024UVTQ Image
Download Datasheet  Request Quote  Product Details

Diodes Incorporated - DMN2024UVTQ

MOSFET from Diodes Incorporated
20 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
19 to 34 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 ºC
Package:
TSOT26
Applications:
Backlighting, DC-DC Converters, Power Management F...
more info
BUK9M4R3-40H Image
Download Datasheet  Request Quote  Product Details

Nexperia - BUK9M4R3-40H

MOSFET from Nexperia
40 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
69 to 95 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.4 to 12 milliohm
Gate Source Voltage:
-10 to 16 V
Power Dissipation:
90 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT1210
Industry:
Automotive, Commercial, Industrial
Applications:
Automotive systems, Powertrain, chassis, body and ...
more info
SSM3K329R Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3K329R

MOSFET from Toshiba
2 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
96 to 289 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Package:
SOT-23
Applications:
Power Management Switches, High-Speed Switching
more info
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - S2306

MOSFET from ROHM Semiconductor
1200 V, 62 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 226 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
IPB70N10S3L-12 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IPB70N10S3L-12

MOSFET from Infineon Technologies
75V-100V N-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 70 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
9.8 to 15.8 Mohms
Gate Source Voltage:
20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TO263-3-2
Applications:
Automotive
more info
SiA519EDJ Image
Download Datasheet  Request Quote  Product Details

Vishay - SiA519EDJ

MOSFET from Vishay
-20 V, N-Channel, P-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
32 to 137 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
7.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SC-70
more info
Download Datasheet  Request Quote  Product Details

onsemi - NTHL082N65S3HF

MOSFET from onsemi
-30 to 30 V, 79 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
70 to 79 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
313 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247 Long Leads
Industry:
Industrial, Commercial
Applications:
Telecom / Server Power Supplies, Industrial Power ...
more info
STD16N60M2 Image
Download Datasheet  Request Quote  Product Details

STMicroelectronics - STD16N60M2

MOSFET from STMicroelectronics
- 25 to 25 V, 19 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
280 to 320 Milliohm
Gate Source Voltage:
- 25 to 25 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
IXTK170N10P Image
Download Datasheet  Request Quote  Product Details

Littelfuse - IXTK170N10P

MOSFET from Littelfuse
-20 to 20 V, 198 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
170 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
715 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-264
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
DMN53D0LT Image
Download Datasheet  Request Quote  Product Details

Diodes Incorporated - DMN53D0LT

MOSFET from Diodes Incorporated
50 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.35 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1080 to 4500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.3 W
Temperature operating range:
-55 to 150 ºC
Package:
SOT523
Applications:
Motor Driving, Power Management Functions, Load Sw...
more info
BUK9M5R2-30E Image
Download Datasheet  Request Quote  Product Details

Nexperia - BUK9M5R2-30E

MOSFET from Nexperia
30 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
63 to 70 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.4 to 9.8 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
79 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT1210
Industry:
Automotive, Commercial, Industrial
Applications:
Automotive systems, Motors, lamps and solenoid con...
more info
SSM3K48FU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3K48FU

MOSFET from Toshiba
0.15 W, 30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2000 to 5400 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-323
Applications:
Load Switching Applications
more info
RQ3E180GN Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RQ3E180GN

MOSFET from ROHM Semiconductor
30 V, 22.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-39 to 39 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.3 to 6.1 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

More

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type