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MOSFETs from Manufacturers in Germany - Page 50

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 50 of 89
IPB65R065C7 Image
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Infineon Technologies - IPB65R065C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21 to 33 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.058 to 0.138 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
171 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPB65R045C7 Image
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Infineon Technologies - IPB65R045C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
29 to 46 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.040 to 0.096 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPD60R360P7S Image
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Infineon Technologies - IPD60R360P7S

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 to 9 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.300 to 0.702 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
41 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPB65R125C7 Image
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Infineon Technologies - IPB65R125C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 to 18 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.111 to 0.265 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
101 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPD60R600P7S Image
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Infineon Technologies - IPD60R600P7S

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 to 6 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.490 to 1.152 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
30 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPB90R340C3 Image
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Infineon Technologies - IPB90R340C3

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.5 to 15 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
0.28 to 0.76 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
208 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
Quasi Resonant Flyback / Forward topologies, SMPS,...
more info
IPD60R180P7S Image
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Infineon Technologies - IPD60R180P7S

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 18 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.145 to 0.339 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
72 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
IPD80R280P7 Image
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Infineon Technologies - IPD80R280P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10.6 to 17 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
0.24 to 0.62 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
101 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
Recommended for ZV Stopologies used in high densit...
more info
IPB60R180C7 Image
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Infineon Technologies - IPB60R180C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 13 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.155 to 0.346 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
68 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPDD60R145CFD7 Image
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Infineon Technologies - IPDD60R145CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 to 24 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.114 to 0.259 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
160 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB60R099C7 Image
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Infineon Technologies - IPB60R099C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 to 22 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.085 to 0.190 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPD60R280P7S Image
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Infineon Technologies - IPD60R280P7S

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 12 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.214 to 0.501 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
53 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD60R650CE Image
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Infineon Technologies - IPD60R650CE

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.2 to 9.9 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.54 to 1.40 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
82 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPB60R210CFD7 Image
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Infineon Technologies - IPB60R210CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 12 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.171 to 0.390 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
64 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPD60R210CFD7 Image
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Infineon Technologies - IPD60R210CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 12 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.171 to 0.390 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
64 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
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