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MOSFETs from Manufacturers in Japan - Page 135

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 135 of 161
TK100A10N1 Image
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Toshiba - TK100A10N1

MOSFET from Toshiba
100 V, 140 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
207 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.1 to 3.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RV2C010UN Image
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ROHM Semiconductor - RV2C010UN

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1 to 1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
340 to 1050 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.4 W
Temperature operating range:
150 Degree C
Package:
DFN10063
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK110A10PL Image
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Toshiba - TK110A10PL

MOSFET from Toshiba
100 V, 33 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
9.1 to 16 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
36 W
Package:
TO-220
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RS1G260MN Image
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ROHM Semiconductor - RS1G260MN

MOSFET from ROHM Semiconductor
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.4 to 4.4 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6P56FE Image
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Toshiba - SSM6P56FE

MOSFET from Toshiba
-20 V, 1.6 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.8 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
310 to 4000 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.25 W
Package:
SOT-563
Applications:
Power Management Switches
more info
RQ5C060BC Image
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ROHM Semiconductor - RQ5C060BC

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
16.1 to 51 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching, Load switch
more info
TK18A30D Image
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Toshiba - TK18A30D

MOSFET from Toshiba
300 V, 60 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
100 to 139 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RQ5E035AT Image
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ROHM Semiconductor - RQ5E035AT

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
38 to 70 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK13A25D Image
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Toshiba - TK13A25D

MOSFET from Toshiba
250 V, 25 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
190 to 250 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RQ6C065BC Image
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ROHM Semiconductor - RQ6C065BC

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 to 6.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
14.9 to 50 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching, Load switch
more info
SSM6P41FE Image
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Toshiba - SSM6P41FE

MOSFET from Toshiba
-20 V, 1.76 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.72 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
250 to 1040 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Package:
SOT-363
Applications:
Power Management Switches
more info
RV3C002UN Image
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ROHM Semiconductor - RV3C002UN

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-0.15 to 0.15 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1.4 to 5.4 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.1 W
Temperature operating range:
150 Degree C
Package:
DFN06043
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK2R4E08QM Image
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Toshiba - TK2R4E08QM

MOSFET from Toshiba
80 V, 178 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.97 to 3.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Package:
TO-220
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RQ5E020SP Image
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ROHM Semiconductor - RQ5E020SP

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
85 to 210 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
T2N7002BK Image
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Toshiba - T2N7002BK

MOSFET from Toshiba
60 V, 0.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.4 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1050 to 1750 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Package:
SOT-23
Applications:
High-Speed Switching
more info
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