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MOSFETs from Manufacturers in Japan - Page 134

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 134 of 161
RQ5E025AT Image
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ROHM Semiconductor - RQ5E025AT

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
70 to 135 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
TSMT3
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK110E10PL Image
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Toshiba - TK110E10PL

MOSFET from Toshiba
100 V, 33 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
9 to 16 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
87 W
Package:
TO-220
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RTL035N03 Image
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ROHM Semiconductor - RTL035N03

MOSFET from ROHM Semiconductor
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
40 to 79 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT363T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6P35AFE Image
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Toshiba - SSM6P35AFE

MOSFET from Toshiba
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.25 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1100 to 20000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.25 W
Package:
SOT-363
Applications:
Analog Switches
more info
RQ5E050AT Image
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ROHM Semiconductor - RQ5E050AT

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
21 to 37 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6P35AFU Image
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Toshiba - SSM6P35AFU

MOSFET from Toshiba
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.25 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1100 to 20000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.285 W
Package:
SOT-363
Applications:
Analog Switches
more info
RSJ400N10 Image
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ROHM Semiconductor - RSJ400N10

MOSFET from ROHM Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
19 to 30 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
150 Degree C
Package:
TO263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK100E10N1 Image
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Toshiba - TK100E10N1

MOSFET from Toshiba
100 V, 140 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
207 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
2.8 to 3.4 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
255 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RS3L140GN Image
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ROHM Semiconductor - RS3L140GN

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-14 to 14 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4.9 to 9.6 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6N37FU Image
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Toshiba - SSM6N37FU

MOSFET from Toshiba
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.25 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1650 to 5600 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.3 W
Package:
SOT-363
Applications:
High-Speed Switching, Analog Switches
more info
RE1E002SP Image
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ROHM Semiconductor - RE1E002SP

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.25 to 0.25 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
900 to 2400 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-416FL
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6N57NU Image
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Toshiba - SSM6N57NU

MOSFET from Toshiba
30 V, 3.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
30 to 82 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Package:
UDFN6
Applications:
Power Management Switches, DC-DC Converters
more info
RE1C001ZP Image
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ROHM Semiconductor - RE1C001ZP

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 to 0.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
2500 to 40000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-416FL
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK22A10N1 Image
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Toshiba - TK22A10N1

MOSFET from Toshiba
100 V, 28 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
52 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
11.5 to 13.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RQ5A040ZP Image
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ROHM Semiconductor - RQ5A040ZP

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
22 to 110 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
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