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MOSFETs from Manufacturers in Japan - Page 138

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
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Page 138 of 161
RSF015N06 Image
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ROHM Semiconductor - RSF015N06

MOSFET from ROHM Semiconductor
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
210 to 350 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT323T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK2R4A08QM Image
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Toshiba - TK2R4A08QM

MOSFET from Toshiba
80 V, 179 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.88 to 3.1 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
47 W
Package:
TO-220
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RQ6A045AP Image
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ROHM Semiconductor - RQ6A045AP

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
22 to 100 Milliohm
Gate Source Voltage:
-8 to 0 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6N7002BFE Image
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Toshiba - SSM6N7002BFE

MOSFET from Toshiba
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1620 to 3300 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-563
Applications:
High-Speed Switching Applications, Analog Switch A...
more info
RTF016N05 Image
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ROHM Semiconductor - RTF016N05

MOSFET from ROHM Semiconductor
45 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.6 to 1.6 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
140 to 280 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT323T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK100E08N1 Image
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Toshiba - TK100E08N1

MOSFET from Toshiba
80 V, 130 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
214 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.6 to 3.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
255 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RQ5L015SP Image
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ROHM Semiconductor - RQ5L015SP

MOSFET from ROHM Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.5 to 1.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
200 to 360 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK22E10N1 Image
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Toshiba - TK22E10N1

MOSFET from Toshiba
100 V, 28 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
52 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
11.5 to 13.8 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
72 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RQ5C020TP Image
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ROHM Semiconductor - RQ5C020TP

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
100 to 250 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Load SW
more info
SSM6P49NU Image
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Toshiba - SSM6P49NU

MOSFET from Toshiba
-20 V, 6.74 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
36 to 157 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Package:
UDFN6
Applications:
Power Management Switches
more info
RS1G150MN Image
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ROHM Semiconductor - RS1G150MN

MOSFET from ROHM Semiconductor
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-43 to 43 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
7.6 to 13.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
150 Degree C
Package:
HSOP8S
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6N37FE Image
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Toshiba - SSM6N37FE

MOSFET from Toshiba
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.25 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1650 to 5600 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-363
Applications:
High-Speed Switching, Analog Switches
more info
RD3H080SP Image
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ROHM Semiconductor - RD3H080SP

MOSFET from ROHM Semiconductor
-45 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
-45 V
Drain Source Resistance:
65 to 145 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
150 Degree C
Package:
DPAK
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK20A25D Image
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Toshiba - TK20A25D

MOSFET from Toshiba
250 V, 55 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
73 to 100 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RQ5A025ZP Image
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ROHM Semiconductor - RQ5A025ZP

MOSFET from ROHM Semiconductor
-12 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
-12 V
Drain Source Resistance:
44 to 220 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-416FL
Industry:
Industrial, Commercial
Applications:
Switching
more info
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