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MOSFETs from Manufacturers in Japan - Page 136

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 136 of 161
RQ6E030SP Image
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ROHM Semiconductor - RQ6E030SP

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
60 to 140 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK20A20D Image
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Toshiba - TK20A20D

MOSFET from Toshiba
200 V, 43 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
70 to 109 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RD3L140SP Image
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ROHM Semiconductor - RD3L140SP

MOSFET from ROHM Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-14 to 14 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
60 to 108 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
150 Degree C
Package:
DPAK
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6P47NU Image
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Toshiba - SSM6P47NU

MOSFET from Toshiba
-20 V, 4.6 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
88.5 to 242 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2 W
Package:
UDFN6
Applications:
Power Management Switches
more info
RQ5E030RP Image
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ROHM Semiconductor - RQ5E030RP

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
55 to 125 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6N815R Image
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Toshiba - SSM6N815R

MOSFET from Toshiba
100 V, 3.1 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
84 to 180 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.8 W
Package:
TSOP6F
Applications:
Power Management Switches
more info
RQ5H020SP Image
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ROHM Semiconductor - RQ5H020SP

MOSFET from ROHM Semiconductor
-45 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-45 V
Drain Source Resistance:
130 to 280 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
TSMT3
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK2R9E10PL Image
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Toshiba - TK2R9E10PL

MOSFET from Toshiba
100 V, 161 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
2.4 to 4.1 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
306 W
Package:
TO-220
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
RUF025N02 Image
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ROHM Semiconductor - RUF025N02

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
39 to 160 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT323T
Industry:
Industrial, Commercial
Applications:
Switching
more info
TK13E25D Image
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Toshiba - TK13E25D

MOSFET from Toshiba
250 V, 25 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
190 to 250 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
102 W
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
RSJ301N10 Image
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ROHM Semiconductor - RSJ301N10

MOSFET from ROHM Semiconductor
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-30 to 30 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
33 to 50 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
150 Degree C
Package:
TO263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
SSM6N56FE Image
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Toshiba - SSM6N56FE

MOSFET from Toshiba
20 V, 1 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.8 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
186 to 840 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.25 W
Package:
SOT-363
Applications:
High-Speed Switching
more info
RQ6C050BC Image
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ROHM Semiconductor - RQ6C050BC

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
27 to 77 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Industrial, Commercial
Applications:
Switching, Load switch
more info
SSM6N48FU Image
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Toshiba - SSM6N48FU

MOSFET from Toshiba
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2000 to 5400 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.3 W
Package:
SOT-363
Applications:
Load Switching Applications
more info
RUL035N02 Image
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ROHM Semiconductor - RUL035N02

MOSFET from ROHM Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
31 to 80 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT363T
Industry:
Industrial, Commercial
Applications:
DC/DC converters
more info
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