MOSFETs from Manufacturers in Japan - Page 158

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 158 of 161
1200 V, 51 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
105 to 179 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
134 W
Package:
TO-247N
Industry:
Industrial, Automotive
Applications:
Automobile, Switch mode power supplies
more info
1200 V, 60 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
31 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 120 Milliohm
Gate Source Voltage:
-4 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
45 V, 6.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
84 to 95 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Package:
SOT-346T
Industry:
Industrial, Commercial
Applications:
Switching
more info
1200 V, 64 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
62 to 124 Milliohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
115 W
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
1200 V, 106 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 125 Milliohm
Gate Source Voltage:
-6 to 22 V
Power Dissipation:
262 W
Package:
TO-247N
Industry:
Industrial, Automotive
Applications:
Automobile, Switch mode power supplies
more info
1200 V, 27 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
450 to 610 Milliohm
Gate Source Voltage:
-6 to 22 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
750 V, 63 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
34 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
45 to 77 Milliohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
115 W
Package:
TO-247N
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
750 V, 94 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
26 to 44 Milliohm
Gate Source Voltage:
-4 to 21 V
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
60 V, 18.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-65 to 65 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.5 to 11.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching, Moter drives, DC/DC converter
more info
40 V, 31 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-50 to 50 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.9 to 6.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
35 W
Package:
TO252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
1200 V, 178 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
95 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22 to 38 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
427 W
Package:
TO-247N
Industry:
Industrial, Automotive
Applications:
Automobile, Switch mode power supplies
more info
650 V, 104 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
30 to 43 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
262 W
Package:
TO-247N
Industry:
Industrial, Automotive
Applications:
Automobile, Switch mode power supplies
more info
60 V, 8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
78 to 140 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Package:
TO252 (DPAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
750 V, 94 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
26 to 44 Milliohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
176 W
Package:
TO-247N
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
650 V, 133 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
93 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
22 to 29 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
339 W
Package:
TO-247N
Industry:
Industrial, Commercial
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info

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