MOSFETs from Manufacturers in Japan - Page 160

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 160 of 161
1200 V, 107 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39 to 55 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 68 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
262 W
Package:
TO-247-4L
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
1200 V, 107 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39 to 55 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 68 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
262 W
Package:
TO-247N
Applications:
Automobile, Switch mode power supplies
more info
1200 V, 107 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39 to 55 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 to 60 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
262 W
Package:
TO-247N
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
1200 V, 60 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 to 31 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 to 120 Milliohm
Gate Source Voltage:
-4 to 22 V
Power Dissipation:
165 W
Package:
TO-247N
Applications:
Solar inverters, DC/DC converters, Switch mode pow...
more info
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
70 to 100 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN2020-8S, HUML2020L8
Applications:
Switching, Load Switch
more info
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
31 to 49 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK, TO-252
Applications:
Switching
more info
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
34 to 74 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.1 to 1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSMT8
Applications:
Switching
more info
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
32 to 51 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN2020-8S, HUML2020L8
Applications:
Switching, Load Switch
more info
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
13.7 to 27 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.1 to 1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSMT8
Applications:
Switching
more info
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
31 to 44 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.1 to 1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSMT8
Applications:
Switching
more info
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 35 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
9.8 to 15.7 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
2 to 20 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSMT8
Applications:
Switching
more info
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
71 to 101 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.1 to 1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSMT8
Applications:
Switching
more info
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
33 to 51 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.1 to 1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSMT8
Applications:
Switching
more info
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
3.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
62 to 87 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
0.95 to 1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-457T, SC-95, TSMT6
Applications:
Switching, Load Switch
more info
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
15 to 24 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
56 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK, TO-252
Applications:
Switching
more info

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