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MOSFETs from Manufacturers in Japan - Page 161

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 161 of 161
QH8KC6 Image
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ROHM Semiconductor - QH8KC6

MOSFET from ROHM Semiconductor
60 V Dual Channel Power MOSFET for Switching Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
23 to 44 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSMT8
Applications:
Switching
more info
RD3L03BAT Image
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ROHM Semiconductor - RD3L03BAT

MOSFET from ROHM Semiconductor
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
32 to 46 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
56 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK, TO-252
Applications:
Switching
more info
RQ6G050AT Image
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ROHM Semiconductor - RQ6G050AT

MOSFET from ROHM Semiconductor
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
31 to 49 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
0.95 to 1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-457T, SC-95, TSMT6
Applications:
Switching, Load Switch
more info
QH8MB5 Image
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ROHM Semiconductor - QH8MB5

MOSFET from ROHM Semiconductor
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 to 5 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
34 to 51 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.1 to 1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSMT8
Applications:
Switching
more info
QH8KC5 Image
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ROHM Semiconductor - QH8KC5

MOSFET from ROHM Semiconductor
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
70 to 140 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.1 to 1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSMT8
Applications:
Switching
more info
RS1G201AT Image
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ROHM Semiconductor - RS1G201AT

MOSFET from ROHM Semiconductor
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
20 to 78 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
4.2 to 6.5 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
3 to 40 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSOP8
Applications:
Load Switching
more info
BSS138BKW Image
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ROHM Semiconductor - BSS138BKW

MOSFET from ROHM Semiconductor
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.38 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
0.49 to 4 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
200 to 300 mW
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-323
Applications:
Switching circuits, Low-side loadswitch, Relay dri...
more info
QH8MC5 Image
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ROHM Semiconductor - QH8MC5

MOSFET from ROHM Semiconductor
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 to 3.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
70 to 101 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.1 to 1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSMT8
Applications:
Switching
more info
RQ3P300BH Image
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ROHM Semiconductor - RQ3P300BH

MOSFET from ROHM Semiconductor
20 V, Single, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 39 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
11.9 to 24 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
2 to 32 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSMT8
Applications:
Primary side switch, Motor drives, DC/DC Converter
more info
RD3L07BAT Image
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ROHM Semiconductor - RD3L07BAT

MOSFET from ROHM Semiconductor
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
10.1 to 14.1 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
101 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK, TO-252
Applications:
Switching
more info
RQ3L070AT Image
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ROHM Semiconductor - RQ3L070AT

MOSFET from ROHM Semiconductor
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 25 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
22 to 32 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
2 to 20 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSMT8
Applications:
Switching
more info
RQ7G080AT Image
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ROHM Semiconductor - RQ7G080AT

MOSFET from ROHM Semiconductor
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
14.7 to 22.6 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
1.1 to 1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSMT8
Applications:
Switching
more info
RD3G07BAT Image
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ROHM Semiconductor - RD3G07BAT

MOSFET from ROHM Semiconductor
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
5.7 to 8.7 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
101 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK, TO-252
Applications:
Switching
more info
RD3L01BAT Image
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ROHM Semiconductor - RD3L01BAT

MOSFET from ROHM Semiconductor
20 V, Single, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
65 to 93 milliohm
Gate Source Voltage:
20 V
Power Dissipation:
26 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK, TO-252
Applications:
Switching
more info
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