MOSFETs from Manufacturers in Japan - Page 57

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 57 of 161
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.18 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
1500 to 20000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.1 W
Package:
SOT-416
Applications:
High Speed Switching Applications, Analog Switch A...
more info
100 V, -12 to 12 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-12 to 12 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
89 to 148 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
more info
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-10 to 10 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
9.5 to 18.9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Commercial, Automotive
Applications:
Switching
more info
-20 V, 23.1 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
18 to 54 Milliohm
Gate Source Voltage:
-8 to 6 V
Power Dissipation:
1 W
Package:
SOT-363
Applications:
Power Management Switches
more info
60 V, 5 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
42 to 100 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK(S)
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
-45 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
-45 V
Drain Source Resistance:
26 to 53 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Commercial, Automotive
Applications:
Switching
more info
60 V, 1.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.65 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
800 to 2400 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.5 W
Package:
SOT-23
Applications:
Relay Drivers
more info
60 V, -80 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6.8 to 8.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
92.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Commercial, Industrial
Applications:
For high current switching
more info
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
80 to 210 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Commercial, Automotive
Applications:
Switching
more info
60 V, 0.6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.4 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1050 to 1750 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.9 W
Package:
SOT-346
Applications:
High-Speed Switching
more info
40 V, -100 to 100 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-100 to 100 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.7 to 3.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
119 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
For high current switching
more info
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
25 to 53 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Commercial, Automotive
Applications:
Switching
more info
20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
460 to 1520 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.8 W
Package:
SOT-323
Applications:
High-Speed Switching Applications
more info
40 V, 40 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
9 to 15 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
LDPAK(S)-(1)
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
45 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-9.5 to 9.5 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
11 to 21 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Commercial, Automotive
Applications:
Switching
more info

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