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MOSFETs from Manufacturers in Japan - Page 53

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 53 of 161
SSM6K504NU Image
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Toshiba - SSM6K504NU

MOSFET from Toshiba
30 V, 4.8 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
14 to 26 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Package:
UDFN6B
Applications:
High-Speed Switching
more info
RJK0353DPA Image
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Renesas - RJK0353DPA

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4 to 7.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
SP8K31HZG Image
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ROHM Semiconductor - SP8K31HZG

MOSFET from ROHM Semiconductor
60 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
85 to 150 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
SSM3K122TU Image
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Toshiba - SSM3K122TU

MOSFET from Toshiba
20 V, 3.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
87 to 304 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.8 W
Package:
SOT-323
Applications:
Power Management Switch Applications, High-Speed S...
more info
RJF0610JSP Image
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Renesas - RJF0610JSP

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
1.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
153 to 285 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Automotive
Applications:
Power Switching
more info
SP8K2HZG Image
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ROHM Semiconductor - SP8K2HZG

MOSFET from ROHM Semiconductor
30 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
21 to 47 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching, Motor Drive
more info
TK9A55DA Image
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Toshiba - TK9A55DA

MOSFET from Toshiba
550 V, 20 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.5 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
680 to 860 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Package:
TO-220
Applications:
Switching Regulator Applications
more info
RJK0655DPB Image
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Renesas - RJK0655DPB

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.3 to 6.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
R8008ANJFRG Image
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ROHM Semiconductor - R8008ANJFRG

MOSFET from ROHM Semiconductor
800 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
790 to 1540 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
195 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
TK9A60D Image
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Toshiba - TK9A60D

MOSFET from Toshiba
600 V, 24 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
670 to 830 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Package:
TO-220
Applications:
Switching Regulator Applications
more info
RQK0203SGDQA Image
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Renesas - RQK0203SGDQA

MOSFET from Renesas
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.9 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
68 to 150 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RJ1U330AAFRG Image
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ROHM Semiconductor - RJ1U330AAFRG

MOSFET from ROHM Semiconductor
250 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-33 to 33 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
77 to 165 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
211 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Automotive
Applications:
Switching
more info
SSM3J375F Image
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Toshiba - SSM3J375F

MOSFET from Toshiba
-20 V, 4.6 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
123 to 311 Milliohm
Gate Source Voltage:
-8 to 6 V
Power Dissipation:
1.2 W
Package:
S-Mini
Applications:
Power Management Switches
more info
RJK1051DPB Image
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Renesas - RJK1051DPB

MOSFET from Renesas
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
30 to 46 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Switching Mode Power Supply
more info
SP8K24HZG Image
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ROHM Semiconductor - SP8K24HZG

MOSFET from ROHM Semiconductor
45 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
18 to 37 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
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