1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs from Manufacturers in Japan - Page 56

2,414 MOSFETs from 10 manufacturers meet your specification.
Filters (1)
Selected Filters:
2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 56 of 161
SSM3K131TU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3K131TU

MOSFET from Toshiba
30 V, 10.1 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
20.5 to 41.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.8 W
Package:
SOT-323
Applications:
High Speed Switching Applications
more info
RJK0856DPB Image
Download Datasheet  Request Quote  Product Details

Renesas - RJK0856DPB

MOSFET from Renesas
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
6.9 to 8.9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RSJ451N04FRA Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RSJ451N04FRA

MOSFET from ROHM Semiconductor
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-45 to 45 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
9.5 to 13.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3J15FV Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J15FV

MOSFET from Toshiba
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8000 to 32000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-723
Applications:
High Speed Switching Applications, Analog Switch A...
more info
RQK0606KGDQA Image
Download Datasheet  Request Quote  Product Details

Renesas - RQK0606KGDQA

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
173 to 290 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RTR025P02HZG Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RTR025P02HZG

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
70 to 160 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3J371R Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J371R

MOSFET from Toshiba
-20 V, 10.4 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
46 to 150 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2 W
Package:
SOT-323
Applications:
Power Management Switches
more info
UPA1855GR Image
Download Datasheet  Request Quote  Product Details

Renesas - UPA1855GR

MOSFET from Renesas
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
17 to 29 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSSOP
Industry:
Commercial, Industrial
more info
RTF016N05FRA Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RTF016N05FRA

MOSFET from ROHM Semiconductor
45 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-1.6 to 1.6 A
Drain Source Breakdown Voltage:
45 V
Drain Source Resistance:
140 to 280 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323T
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM6J402TU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM6J402TU

MOSFET from Toshiba
-30 V, 5.3 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
80 to 225 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
DC-DC converter Applications, High-Speed Switching...
more info
2SK3901-ZK Image
Download Datasheet  Request Quote  Product Details

Renesas - 2SK3901-ZK

MOSFET from Renesas
60 V, -60 to 60 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-60 to 60 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
10.3 to 16.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
64 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263 (MP-25ZK)
Industry:
Commercial, Industrial
more info
BSS84AHZG Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - BSS84AHZG

MOSFET from ROHM Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.23 to 0.23 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
2800 to 6400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.35 W
Temperature operating range:
150 Degree C
Package:
SOT-23
Industry:
Commercial, Automotive
Applications:
Switching circuits, Low-side loadswitch, Relay dri...
more info
SSM3J143TU Image
Download Datasheet  Request Quote  Product Details

Toshiba - SSM3J143TU

MOSFET from Toshiba
-20 V, 12.8 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
24.9 to 88.4 Milliohm
Gate Source Voltage:
-8 to 6 V
Power Dissipation:
1 W
Package:
UFM
Applications:
Power Management Switches
more info
2SK2315 Image
Download Datasheet  Request Quote  Product Details

Renesas - 2SK2315

MOSFET from Renesas
60 V, 2 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
350 to 600 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
High speed power switching
more info
RD3L140SPFRA Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - RD3L140SPFRA

MOSFET from ROHM Semiconductor
-60 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-14 to 14 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
60 to 108 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.