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MOSFETs from Manufacturers in Japan - Page 54

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 54 of 161
SSM3J16FU Image
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Toshiba - SSM3J16FU

MOSFET from Toshiba
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
6000 to 45000 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-323
Applications:
High Speed Switching Applications, Analog Switch A...
more info
RJK0660DPA Image
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Renesas - RJK0660DPA

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4.2 to 5.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
QS8M51HZG Image
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ROHM Semiconductor - QS8M51HZG

MOSFET from ROHM Semiconductor
-100 to 100 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
240 to 540 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Automotive
Applications:
Switching
more info
TK8Q60W Image
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Toshiba - TK8Q60W

MOSFET from Toshiba
600 V, 18.5 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
420 to 500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
80 W
Package:
IPAK
Applications:
Switching Voltage Regulators
more info
RQK0204TGDQA Image
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Renesas - RQK0204TGDQA

MOSFET from Renesas
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.3 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
100 to 204 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
R6004PND3FRA Image
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ROHM Semiconductor - R6004PND3FRA

MOSFET from ROHM Semiconductor
600 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1400 to 1800 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
65 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
SSM3K15FU Image
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Toshiba - SSM3K15FU

MOSFET from Toshiba
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2200 to 7000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.15 W
Package:
SOT-323
Applications:
High Speed Switching Applications, Analog Switch A...
more info
UPA2690T1R Image
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Renesas - UPA2690T1R

MOSFET from Renesas
-20 to 20 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 to 4 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
33 to 182 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
HUSON
Industry:
Commercial, Industrial
more info
QS8J4HZG Image
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ROHM Semiconductor - QS8J4HZG

MOSFET from ROHM Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4 to -4 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
40 to 84 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3K36MFV Image
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Toshiba - SSM3K36MFV

MOSFET from Toshiba
20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
460 to 1520 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-723
Applications:
High-Speed Switching Applications
more info
RQK0603CGDQA Image
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Renesas - RQK0603CGDQA

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
212 to 348 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RTL020P02FRA Image
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ROHM Semiconductor - RTL020P02FRA

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
100 to 250 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Commercial, Automotive
Applications:
Switching
more info
SSM3K17FU Image
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Toshiba - SSM3K17FU

MOSFET from Toshiba
50 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
12000 to 40000 Milliohm
Gate Source Voltage:
-7 to 7 V
Power Dissipation:
0.15 W
Package:
SOT-323
Applications:
High Speed Switching Applications, Analog Switch A...
more info
UPA1890GR Image
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Renesas - UPA1890GR

MOSFET from Renesas
-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
18 to 64 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSSOP
Industry:
Commercial, Industrial
more info
RSS070P05HZG Image
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ROHM Semiconductor - RSS070P05HZG

MOSFET from ROHM Semiconductor
-45 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
-45 V
Drain Source Resistance:
19 to 39 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Commercial, Automotive
Applications:
Switching
more info
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