MOSFETs from Manufacturers in Japan - Page 55

2,414 MOSFETs from 10 manufacturers meet your specification.
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2,414 MOSFETs from 10 Manufacturers
2,414 Products from 10 Manufacturers
Page 55 of 161
60 V, 9.3 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
28 to 69 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.4 W
Package:
SOT-23
Applications:
Power Management Switches, DC-DC Converters
more info
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.8 to 4.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
48 to 98 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323T
Industry:
Commercial, Automotive
Applications:
Switching
more info
-40 V, 24.2 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
28 to 52 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
3 W
Package:
TSOP6F
Applications:
Power Management Switches
more info
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
25 to 40 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK(S)
Industry:
Automotive
Applications:
Power Switching
more info
-45 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-45 V
Drain Source Resistance:
110 to 260 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
15 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
900 V, 46 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1000 to 1300 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Package:
TO-3P
Applications:
Switching Voltage Regulators
more info
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
8.5 to 16.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
12 to 27 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.5 W
Temperature operating range:
150 Degree C
Package:
TSMT8
Industry:
Commercial, Automotive
Applications:
DC/DC converters
more info
30 V, 2.2 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
45 to 109 Milliohm
Gate Source Voltage:
-8 to 12 V
Power Dissipation:
2 W
Package:
SOT-23
Applications:
Power Management Switches, DC-DC Converters
more info
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
205 to 336 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
5 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-6.5 to 6.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
24 to 48 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Commercial, Automotive
Applications:
Switching
more info
60 V, 6 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
230 to 580 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Package:
SOT-323
Applications:
Load Switches, Motor Drivers
more info
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.8 to 6.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
-45 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-45 V
Drain Source Resistance:
130 to 280 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
Switching
more info

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