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MOSFETs - Page 293

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 293 of 1280
PJQ4441P Image
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Panjit Semiconductor - PJQ4441P

MOSFET from Panjit Semiconductor
-40 V P-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-44 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
14 to 25 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Commercial, Military
more info
RM40P40LD Image
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Rectron Semiconductor - RM40P40LD

MOSFET from Rectron Semiconductor
-40 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
12 to 14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
80 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-252-2L
Industry:
Commercial, Industrial
Applications:
Power switching application, Hard switched and hig...
more info
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Yangjie Electronic Technology - YJL03N06C

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
60 to 95 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
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Goford Semiconductor - G1N50

MOSFET from Goford Semiconductor
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
8750 to 10000 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
18.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89
Industry:
Industrial, Commercial
Applications:
DC-DC & DC-AC Converters for telecom, industrial a...
more info
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Hunan Jingxin Microelectronics - ESGNR15R038

MOSFET from Hunan Jingxin Microelectronics
150 V, 180 to 240 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
180 to 240 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
3.3 to 3.8 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM2302

MOSFET from JSMicro Semiconductor
20 V, 3.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.0 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
60 to 115 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Battery Management, High speed switch, low power D...
more info
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First Silicon - FTK8982BDFN56

MOSFET from First Silicon
-20 to 20 V, 48 to 75 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 75 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
5.8 to 11 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
98 W
Temperature operating range:
-55 to 150 Degree C
Package:
PPAK5x6
Industry:
Industrial, Commercial
Applications:
Motor Drive, Power Tools, LED Lighting
more info
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Cystech Electronics - MTE240N25J3-0-T3-G

MOSFET from Cystech Electronics
250 V, 1.8 to 10 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.8 to 10 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
220 to 290 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
74 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
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PFC Device - PSM11N50CT

MOSFET from PFC Device
500 V, 7 to 11.6 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 11.6 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.28 to 0.88 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
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Oriental Semiconductor - OSG60R035TT4SZF

MOSFET from Oriental Semiconductor
600 V, 43 to 66 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
43 to 66 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
31 to 79 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
380 W
Temperature operating range:
-55 to 150 Degree C
Package:
TOLL
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - BL2038-6L

MOSFET from Galaxy Century Microelectronics
±12 V, -3.2 to 4.5 A Dual N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.2 to 4.5 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
23 to 168 milli-ohm
Gate Source Voltage:
±12 V
Power Dissipation:
1.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Military, Industrial, Commercial
Applications:
Motor control, Power Management Functions, DC-DC C...
more info
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Toshiba - MG400V2YMS3

MOSFET from Toshiba
1700 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
400 A
Drain Source Breakdown Voltage:
1700 V
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
2000 W
Package:
PMI153A
Applications:
High-Power Switching, Motor Controllers (including...
more info
RQK0601AGDQS Image
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Renesas - RQK0601AGDQS

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
56 to 91 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
5 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - RD3P08BBLHRBTL

MOSFET from ROHM Semiconductor
100 V, -80 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.8 to 8.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
142 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
more info
IPB95R310PFD7 Image
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Infineon Technologies - IPB95R310PFD7

MOSFET from Infineon Technologies
950 V N-Channel Enhancement Mode Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17.5 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
310 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 degree C
Package:
PG-TO263-3
Industry:
Commercial, Industrial
Applications:
Suitable for hard & soft switching topologies, Opt...
more info
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