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MOSFETs - Page 295

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 295 of 1280
PJS6415A Image
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Panjit Semiconductor - PJS6415A

MOSFET from Panjit Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
38 to 88 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23 6L
Industry:
Commercial, Military
more info
RMP7N600LD Image
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Rectron Semiconductor - RMP7N600LD

MOSFET from Rectron Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1000 to 1300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
106 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252 -2L
Industry:
Commercial, Industrial
Applications:
Adapter, LCD Panel Power, E-Bike Charger, Switchin...
more info
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Yangjie Electronic Technology - YJG70G06A

MOSFET from Yangjie Electronic Technology
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.3 to 9.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060-8L
Industry:
Industrial, Commercial
Applications:
DC-DC Converters, Power management functions, Indu...
more info
1002-9 Image
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Goford Semiconductor - 1002-9

MOSFET from Goford Semiconductor
90 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
90 V
Drain Source Resistance:
200 to 260 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Hunan Jingxin Microelectronics - ESGNJ10R08

MOSFET from Hunan Jingxin Microelectronics
100 V, 64 to 83 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 to 83 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
7.1 to 8.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5x6-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM2301S

MOSFET from JSMicro Semiconductor
-20 V, -2.3 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.3 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
0.090 to 0.142 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
more info
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First Silicon - IRF540I

MOSFET from First Silicon
-20 to 20 V, 27 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
34 to 44 milli-ohm
Gate Source Voltage:
-20 to 20 V
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
Applications:
Power switching application, Load switching in hig...
more info
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Cystech Electronics - MTE120N20FP-0-UB-G

MOSFET from Cystech Electronics
200 V, 2.9 to 9.2 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.9 to 9.2 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
125 to 165 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
33 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Industry:
Industrial, Commercial
more info
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PFC Device - PSM20N65CTF

MOSFET from PFC Device
650 V, 13 to 20 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 to 20 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.165 to 0.45 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
34.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
ITO-220AB
Industry:
Industrial, Commercial
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
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Oriental Semiconductor - OSG65R460FZF_NB

MOSFET from Oriental Semiconductor
650 V, 6.3 to 10 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.3 to 10 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
400 to 1120 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F_NL
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - GBLN4405-S8

MOSFET from Galaxy Century Microelectronics
±20 V, 4.8 to 12 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
4.8 to 12 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
18 to 30 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Military, Industrial, Commercial
more info
SSM6L36FE Image
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Toshiba - SSM6L36FE

MOSFET from Toshiba
-20 to 20 V, 1.23 nC, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.33 to 0.5 A
Drain Source Breakdown Voltage:
-20 to 20 V
Drain Source Resistance:
460 to 3600 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-363
Applications:
High-Speed Switching Applications
more info
RJK2075DPA Image
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Renesas - RJK2075DPA

MOSFET from Renesas
200 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
54 to 69 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
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ROHM Semiconductor - AG091FLD3HRBTL

MOSFET from ROHM Semiconductor
60 V, -80 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.8 to 11.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
76 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
Applications:
Automotive Systems
more info
IRF7341GTRPbF Image
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Infineon Technologies - IRF7341GTRPbF

MOSFET from Infineon Technologies
55 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
5.1 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
43 to 65 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO8
Industry:
Industrial, Commercial
more info
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