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MOSFETs - Page 310

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 310 of 1280
PJQ4401P Image
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Panjit Semiconductor - PJQ4401P

MOSFET from Panjit Semiconductor
-30 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-50 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
7.1 to 14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Commercial, Military
more info
RM13P40S8 Image
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Rectron Semiconductor - RM13P40S8

MOSFET from Rectron Semiconductor
-40 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-13 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
12 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
Applications:
Power switching application, Hard switched and hig...
more info
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Yangjie Electronic Technology - YJL3134KAX

MOSFET from Yangjie Electronic Technology
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
220 to 700 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.18 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-563
Industry:
Industrial, Commercial
Applications:
PWM application, Load switch
more info
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Goford Semiconductor - G3N50

MOSFET from Goford Semiconductor
500 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
2400 to 3000 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
Applications:
Power switch circuit of electron ballast and adapt...
more info
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Hunan Jingxin Microelectronics - ESGNJ085R036

MOSFET from Hunan Jingxin Microelectronics
85 V, 76 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
76 to 80 A
Drain Source Breakdown Voltage:
85 V
Drain Source Resistance:
3.2 to 3.6 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
96 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5x6-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM140N10

MOSFET from JSMicro Semiconductor
100 V, 97 to 140 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
97 to 140 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
6.2 to 7.2 milli-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
215 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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First Silicon - SIFL9N20AD

MOSFET from First Silicon
-20 to 20 V, 4.5 to 9 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 to 9 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
0.20 to 0.45 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Lighting, Uniterrupted Power Supply, Switch Mode P...
more info
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Cystech Electronics - MTX202003KV8A-0-T6-G

MOSFET from Cystech Electronics
30 V, 7 to 18 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
7 to 18 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
13 to 25 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
10.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3×3A
Industry:
Industrial, Commercial
more info
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PFC Device - PSM16N50CT

MOSFET from PFC Device
500 V, 10 to 16 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 16 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.21 to 0.62 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
160 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
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Oriental Semiconductor - OSG80R380FSF_NB

MOSFET from Oriental Semiconductor
800 V, 7 to 11 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 11 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
340 to 880 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
33 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F_NL
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - GBLH2203-3DL8

MOSFET from Galaxy Century Microelectronics
±12 V, -24 to 24 A Dual N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-24 to 24 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
20 to 25 milli-ohm
Gate Source Voltage:
±12 V
Power Dissipation:
18 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3X3-8LC
Industry:
Military, Industrial, Commercial
Applications:
Synchronous Rectification, Motor Control, Protable...
more info
TW070J120B Image
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Toshiba - TW070J120B

MOSFET from Toshiba
1200 V, 67 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
70 to 90 milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
272 W
Package:
TO-3P
Industry:
Industrial, Military, Automotive
Applications:
Switching Voltage Regulators
more info
RJK0328DPB-01 Image
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Renesas - RJK0328DPB-01

MOSFET from Renesas
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.6 to 2.9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - AG194FPD3HRBTL

MOSFET from ROHM Semiconductor
100 V, -80 to 80 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.8 to 8.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
142 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
Applications:
Automotive Systems
more info
BSC0923NDI Image
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Infineon Technologies - BSC0923NDI

MOSFET from Infineon Technologies
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
10 to 40 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.1 to 7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 to 2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TISON-8
Industry:
Industrial, Commercial
Applications:
Onboard charger, Notebook, Mainboard, DC-DC, VRD/V...
more info
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