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MOSFETs - Page 349

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 349 of 1280
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First Silicon - SIF18N20AD

MOSFET from First Silicon
-30 to 30 V, 9 to 18 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 to 18 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
0.12 to 0.15 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Lighting, Uniterrupted Power Supply, Led Tv, Consu...
more info
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Cystech Electronics - MTE013N12RJ3-0-T3-G

MOSFET from Cystech Electronics
120 V, 8 to 47 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 47 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
11 to 14 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
66 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
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PFC Device - PRM7R5N03D

MOSFET from PFC Device
30 V, 60 to 69 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 to 69 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.2 to 2.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
57 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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Oriental Semiconductor - OSG60R041H4T4EZF

MOSFET from Oriental Semiconductor
600 V, 39.2 to 62 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
39.2 to 62 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
32 to 87 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
360 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - GBLN4401-5DL8

MOSFET from Galaxy Century Microelectronics
±20 V, 9 to 48 A Dual N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
9 to 48 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
6.8 to 12.5 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5X6-8LC
Industry:
Military, Industrial, Commercial
more info
XPH2R106NC Image
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Toshiba - XPH2R106NC

MOSFET from Toshiba
60 V, 104 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
110 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1.7 to 4.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
SOP Advance
Industry:
Industrial, Military, Automotive
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
RJK0653DPB Image
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Renesas - RJK0653DPB

MOSFET from Renesas
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3.8 to 6.1 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 150 Degree C
Package:
LFPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RD3U080AAFRA Image
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ROHM Semiconductor - RD3U080AAFRA

MOSFET from ROHM Semiconductor
250 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-8 to 8 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
225 to 300 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
85 W
Temperature operating range:
150 Degree C
Package:
TO-252 (DPAK)
Industry:
Automotive
Applications:
Switching Power Supply
more info
BSG0813NDI Image
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Infineon Technologies - BSG0813NDI

MOSFET from Infineon Technologies
25 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
19 to 50 A
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
0.9 to 3.2 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
2.5 to 6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TISON-8
Industry:
Industrial, Commercial
Applications:
Desktop and server, Single-phase & multiphase POL...
more info
SiS110DN-T1-GE3 Image
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Vishay - SiS110DN-T1-GE3

MOSFET from Vishay
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14.2 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
45 to 70 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
24 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Primary side switch, DC/DC converter, Motor drive ...
more info
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onsemi - FDP054N10

MOSFET from onsemi
-20 to 20 V, 100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
144 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.6 to 5.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
263 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification for ATX / Server / Telec...
more info
STN3P10F6 Image
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STMicroelectronics - STN3P10F6

MOSFET from STMicroelectronics
-20 to 20 V, 16.5 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
136 to 180 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.3 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-223
Applications:
Switching applications
more info
IXTR140P10T Image
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Littelfuse - IXTR140P10T

MOSFET from Littelfuse
-100 V, 400 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-110 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
11 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
270 W
Temperature operating range:
-55 to 150 Degree C
Package:
PLUS247
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
DMP22D6UT Image
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Diodes Incorporated - DMP22D6UT

MOSFET from Diodes Incorporated
20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.43 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
700 to 2600 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 ºC
Package:
SOT523
more info
APT5022BN Image
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Microchip Technology - APT5022BN

MOSFET from Microchip Technology
500 V N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
27 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
220 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
360 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Military
more info
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