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MOSFETs - Page 455

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 455 of 1280
RM140N150AT2 Image
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Rectron Semiconductor - RM140N150AT2

MOSFET from Rectron Semiconductor
150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
140 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
6.2 to 7.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
DC/DC Converter, Ideal for high-frequency switchin...
more info
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Yangjie Electronic Technology - YJG40G10B

MOSFET from Yangjie Electronic Technology
100 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
16 to 25 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060-8L
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
6706A Image
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Goford Semiconductor - 6706A

MOSFET from Goford Semiconductor
-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5 to 6.5 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
20 to 90 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management
more info
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Hunan Jingxin Microelectronics - ES2312A

MOSFET from Hunan Jingxin Microelectronics
20 V, 4.6 to 6.0 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.6 to 6.0 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
11 to 17 milli-ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.76 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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First Silicon - FTK2A04NS

MOSFET from First Silicon
200 V, 1.2 to 1.9 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.2 to 1.9 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
320 to 400 milli-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Industry:
Industrial, Commercial
Applications:
Power Management in TV Inverter
more info
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Cystech Electronics - MTE020N10BRV8-0-T6-G

MOSFET from Cystech Electronics
100 V, 4.4 to 20 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.4 to 20 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
25.0 to 35.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
28 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3×3
Industry:
Industrial, Commercial
more info
SSM3K36FS Image
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Toshiba - SSM3K36FS

MOSFET from Toshiba
20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
460 to 1520 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.15 W
Package:
SOT-416
Applications:
High-Speed Switching Applications
more info
N0607N Image
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Renesas - N0607N

MOSFET from Renesas
60 V, -65 to 65 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-65 to 65 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
7.2 to 8.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
87.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
Applications:
For high current switching
more info
RTQ035P02HZG Image
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ROHM Semiconductor - RTQ035P02HZG

MOSFET from ROHM Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
50 to 100 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Commercial, Automotive
Applications:
Switching
more info
IRHLQ7S7214 Image
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Infineon Technologies - IRHLQ7S7214

MOSFET from Infineon Technologies
250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
2.6 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
1000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-Pin LCC
Industry:
Space, Military
more info
SiSS32LDN-T1-GE3 Image
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Vishay - SiSS32LDN-T1-GE3

MOSFET from Vishay
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
63 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
5.8 to 9.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8S
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
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onsemi - FQPF27N25

MOSFET from onsemi
-30 to 30 V, 250 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
83 to 110 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
more info
STP10NK80ZFP Image
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STMicroelectronics - STP10NK80ZFP

MOSFET from STMicroelectronics
-30 to 30 V, 72 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
780 to 900 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220FP
Applications:
Switching applications
more info
IXFH100N30X3 Image
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Littelfuse - IXFH100N30X3

MOSFET from Littelfuse
300 V, 122 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
13.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
480 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
DMP22D4UDA Image
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Diodes Incorporated - DMP22D4UDA

MOSFET from Diodes Incorporated
20 V, P-Channel MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.33 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1200 to 5000 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.31 W
Temperature operating range:
-55 to 150 ºC
Package:
X2-DFN0806-6
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
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