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MOSFETs - Page 48

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 48 of 1280
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Cystech Electronics - MTE1D3N04BE3-0-UB-G

MOSFET from Cystech Electronics
40 V, 20 to 240 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 to 240 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.4 to 2.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
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Solitron Devices - SD11740

MOSFET from Solitron Devices
-20 to 20 V, 100 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
8.6 to 13.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-227B
Industry:
Industrial, Commercial
Applications:
HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES, POWER S...
more info
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PFC Device - PRM1R6N04N5

MOSFET from PFC Device
40 V, 60 to 127 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 to 127 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.2 to 2.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN-5x6
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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Digitron Semiconductors - 2N6659-PBF

MOSFET from Digitron Semiconductors
35 to 75 V, 1.4 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.4 A
Drain Source Breakdown Voltage:
35 to 75 V
Drain Source Resistance:
2 to 3.6 Ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Industrial, Commercial
Applications:
Used in control and sensing applications
more info
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VBsemi Electronics - VBP112MC60-4L

MOSFET from VBsemi Electronics
1200 V, 42 to 60 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 to 60 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
40 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247-4L
Industry:
Industrial, Commercial
Applications:
Server and Telecom power supplies, Switch mode pow...
more info
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uPI Semiconductor - QM3016AM3

MOSFET from uPI Semiconductor
30 V, 12 to 72 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 to 72 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.4 to 6.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
36.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK3x3
Industry:
Industrial, Commercial
more info
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Calogic - 3N190

MOSFET from Calogic
-40 V, 50 mA, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
50 mA
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
300 ohm
Gate Source Voltage:
-3.0 to -6.5 V
Power Dissipation:
525 mW
Temperature operating range:
-55 to 150 Degree C
Package:
TO-99
Industry:
Industrial, Commercial
more info
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Isahaya Electronics - INK0602BC1

MOSFET from Isahaya Electronics
20 V, 6.2 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
18 to 31 milli-ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
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Oriental Semiconductor - OSG80R380FSF

MOSFET from Oriental Semiconductor
800 V, 7 to 11 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 to 11 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
340 to 880 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
33 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
LED lighting, Telecom, Adapter, Sever, Solar/UPS
more info
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Galaxy Century Microelectronics - TBSS7001-6L

MOSFET from Galaxy Century Microelectronics
±20 V, -0.35 A Dual P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.35 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
1800 to 5000 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Military, Industrial, Commercial
Applications:
P-channel enhancement mode effect transistor, Swit...
more info
iS15M3R4S1TC Image
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iDEAL Semiconductor Devices - iS15M3R4S1TC

MOSFET from iDEAL Semiconductor Devices
150 V, 129 to 182 A, 250 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
129 to 182 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
3.1 to 3.4 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 175 Degree C
Package:
TOLT
Industry:
Industrial, Commercial
Applications:
Motor control, Boost converters and SMPS control F...
more info
GSFH9506 Image
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Good Ark Semiconductor - GSFH9506

MOSFET from Good Ark Semiconductor
950 V, 3.2 to 5 A, 83 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.2 to 5 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
920 to 2820 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
EV charger, Solar, UPS, Server power
more info
TPM7R10CQ5 Image
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Toshiba - TPM7R10CQ5

MOSFET from Toshiba
150 V N-Channel E-mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 to 120 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
5.7 to 8.7 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
3 to 250 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOP Advance(E)
Industry:
Industrial, Commercial
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
UPA2815T1S Image
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Renesas - UPA2815T1S

MOSFET from Renesas
-30 V, 47 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-21 to 21 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
9 to 23 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
14.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
HWSON
Industry:
Commercial, Industrial
more info
BST47T1P4K01-VC Image
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ROHM Semiconductor - BST47T1P4K01-VC

MOSFET from ROHM Semiconductor
750 V, 33 to 47 A, 227 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
33 to 47 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
26 to 60 milli-ohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
227 W
Temperature operating range:
-40 to 175 Degree C
Package:
HSDIP20
Industry:
Automotive, Industrial, Commercial
Applications:
Inverter, Converter, (Hybrid) electrical vehicles ...
more info
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