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MOSFETs - Page 52

19,197 MOSFETs from 69 manufacturers meet your specification.
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19,197 MOSFETs from 69 Manufacturers
19,197 Products from 69 Manufacturers
Page 52 of 1280
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VBsemi Electronics - VBP112MC30

MOSFET from VBsemi Electronics
1200 V, 18 to 30 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 to 30 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
80 milli-ohm
Gate Source Voltage:
-10 to 22 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO247
Industry:
Industrial, Commercial
Applications:
Server and Telecom power supplies, Switch mode pow...
more info
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uPI Semiconductor - QM3017AM3

MOSFET from uPI Semiconductor
-30 V, -8.9 to -56 A, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-8.9 to -56 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
6.3 to 13 milli-ohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
43.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK3x3
Industry:
Industrial, Commercial
more info
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Calogic - 3N171

MOSFET from Calogic
25 V, 30 mA, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 mA
Drain Source Breakdown Voltage:
25 V
Drain Source Resistance:
200 ohm
Gate Source Voltage:
-35 to 35 V
Power Dissipation:
300 mW
Temperature operating range:
-55 to 150 Degree C
Package:
TO-72
Industry:
Industrial, Commercial
more info
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Isahaya Electronics - INK040AAC1

MOSFET from Isahaya Electronics
100 V, 3.7 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.7 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
48 to 83 milli-ohm
Gate Source Voltage:
-12 to 20 V
Power Dissipation:
0.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
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Oriental Semiconductor - OSG55R108FZF

MOSFET from Oriental Semiconductor
550 V, 19 to 30 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
19 to 30 A
Drain Source Breakdown Voltage:
550 V
Drain Source Resistance:
85 to 200 milli-ohm
Gate Source Voltage:
±30 V
Power Dissipation:
34 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
Applications:
PC power, Telecom power, Server power, EV Charger,...
more info
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Galaxy Century Microelectronics - BL1014L

MOSFET from Galaxy Century Microelectronics
±12 V, 0.6 A Single N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
335 to 540 milli-ohm
Gate Source Voltage:
±12 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN1006-3
Industry:
Military, Industrial, Commercial
Applications:
N-channel enhancement mode effect transistor, Swit...
more info
iS20M3R9S1TC Image
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iDEAL Semiconductor Devices - iS20M3R9S1TC

MOSFET from iDEAL Semiconductor Devices
200 V, 135 to 191 A, 314 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
135 to 191 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
3.5 to 3.9 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
314 W
Temperature operating range:
-55 to 175 Degree C
Package:
TOLT
Industry:
Industrial, Commercial
Applications:
Motor control, Boost converters and SMPS control F...
more info
GSFPR8504 Image
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Good Ark Semiconductor - GSFPR8504

MOSFET from Good Ark Semiconductor
40 V, 176 to 280 A, 139 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
176 to 280 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.7 to 1.4 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
139 W
Temperature operating range:
-55 to 150 Degree C
Package:
PPAK
Industry:
Industrial, Commercial
more info
TPM1R908QM Image
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Toshiba - TPM1R908QM

MOSFET from Toshiba
80 V N-Channel Enhancement MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
26 to 238 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
1.5 to 2.8 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
3 to 250 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOP Advance(E)
Industry:
Industrial, Commercial
Applications:
High-Efficiency DC-DC Converters, Switching Voltag...
more info
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Renesas - UPA1930TE

MOSFET from Renesas
-30 V, 7.5 nC, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
58 to 100 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TMM
Industry:
Commercial, Industrial
more info
BST47B1P4K01-VC Image
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ROHM Semiconductor - BST47B1P4K01-VC

MOSFET from ROHM Semiconductor
750 V, 33 to 47 A, 227 W, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
33 to 47 A
Drain Source Breakdown Voltage:
750 V
Drain Source Resistance:
26 to 60 milli-ohm
Gate Source Voltage:
-4 to 21 V
Power Dissipation:
227 W
Temperature operating range:
-40 to 175 Degree C
Package:
HSDIP20
Industry:
Automotive, Industrial, Commercial
Applications:
Inverter, Converter, (Hybrid) electrical vehicles ...
more info
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Infineon Technologies - ISCH69N04NM7V

MOSFET from Infineon Technologies
40 V, 48 to 357 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 357 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.56 to 0.69 milli-ohm
Gate Source Voltage:
±20 V
Power Dissipation:
3 to 167 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TDSON-8
Industry:
Industrial, Commercial
more info
SiHR080N60E-T1-GE3 Image
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Vishay - SiHR080N60E-T1-GE3

MOSFET from Vishay
600 V Power MOSFET for SMPS Applications

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
51 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
74 milli-ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK
Industry:
Artificial Intelligence, Commercial, Industrial
Applications:
Server and telecom power supplies, Switch mode pow...
more info
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onsemi - NTMFS0D9N04XMT1G

MOSFET from onsemi
-20 to 20 V, 61 nC, N-Channel Enhancement Mode, MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
193 to 273 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.76 to 0.9 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
121 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Commercial, Industrial
Applications:
Motor Drive, Battery Protection, Oring
more info
STRH40N6 Image
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STMicroelectronics - STRH40N6

MOSFET from STMicroelectronics
60 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
76 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD.5
Industry:
Space, Military
more info
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