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MOSFETs - Page 541

19,198 MOSFETs from 69 manufacturers meet your specification.
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19,198 MOSFETs from 69 Manufacturers
19,198 Products from 69 Manufacturers
Page 541 of 1280
IXFK150N30X3 Image
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Littelfuse - IXFK150N30X3

MOSFET from Littelfuse
300 V, 177 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
8.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-264P
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
BSS127SSN Image
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Diodes Incorporated - BSS127SSN

MOSFET from Diodes Incorporated
600 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.07 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
80000 to 190000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 ºC
Package:
SC59
Applications:
Motor Control, Backlighting, DC-DC Converters, Pow...
more info
APT10026L2FLL Image
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Microchip Technology - APT10026L2FLL

MOSFET from Microchip Technology
1000 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
1000 V
Drain Source Resistance:
260 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
893 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-264 MAX
Industry:
Commercial, Military
more info
PSMN3R4-30PL Image
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Nexperia - PSMN3R4-30PL

MOSFET from Nexperia
-20 to 20 V, 31 to 64 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.8 to 7.79 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
114 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Industry:
Commercial, Industrial
Applications:
DC-to-DC converters, Load switiching, Motor contro...
more info
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Advanced Power Electronics Corp - AP55T10GH-HF

MOSFET from Advanced Power Electronics Corp
125 W, 100 V, 40 to 56 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 to 56 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
16.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
PJD50N04-AU Image
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Panjit Semiconductor - PJD50N04-AU

MOSFET from Panjit Semiconductor
40 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
8 to 14 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252AA
Industry:
Automotive
more info
RMP8N60T2 Image
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Rectron Semiconductor - RMP8N60T2

MOSFET from Rectron Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
1000 to 1200 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
147 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
High efficiency switch mode power supplies Applica...
more info
G2012 Image
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Goford Semiconductor - G2012

MOSFET from Goford Semiconductor
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
7.3 to 18 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN2*2-6L
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Cystech Electronics - MTE016N15RH8-0-T6-G

MOSFET from Cystech Electronics
150 V, 5.3 to 40 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.3 to 40 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
15.5 to 21 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
78 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5×6
Industry:
Industrial, Commercial
more info
TK380A65Y Image
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Toshiba - TK380A65Y

MOSFET from Toshiba
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.7 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
290 to 380 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
30 W
Temperature operating range:
150 Degree C
Package:
TO-220
Applications:
Switching Voltage Regulators
more info
R6511ENJ Image
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ROHM Semiconductor - R6511ENJ

MOSFET from ROHM Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to 11 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
360 to 400 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
124 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
IRHLNS87Y50 Image
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Infineon Technologies - IRHLNS87Y50

MOSFET from Infineon Technologies
20 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
2.5 milliohm
Gate Source Voltage:
-10 to 12 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
SupIR-SMD
Industry:
Space, Military
Applications:
Point-of-Load (PoL) converters for FPGA, ASIC and ...
more info
SiSH114ADN-T1-GE3 Image
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Vishay - SiSH114ADN-T1-GE3

MOSFET from Vishay
30 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.2 to 9.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
39 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification
more info
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onsemi - NTTFS6H860NLTAG

MOSFET from onsemi
80 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
16.5 to 26 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Industrial, Commercial
Applications:
Reverser Battery protection, Power switches (High ...
more info
STY60NM50 Image
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STMicroelectronics - STY60NM50

MOSFET from STMicroelectronics
-30 to 30 V, 190 to 266 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
45 to 50 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
560 W
Temperature operating range:
0 to 150 Degree C
Package:
Max247
Applications:
Switching applications
more info
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