1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs

MOSFETs - Page 543

19,198 MOSFETs from 69 manufacturers meet your specification.
Filters (0)
19,198 MOSFETs from 69 Manufacturers
19,198 Products from 69 Manufacturers
Page 543 of 1280
STD3N95K5AG Image
Download Datasheet  Request Quote  Product Details

STMicroelectronics - STD3N95K5AG

MOSFET from STMicroelectronics
-30 to 30 V, 3.4 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
4300 to 5000 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Applications:
Switching applications
more info
IXFH150N30X3 Image
Download Datasheet  Request Quote  Product Details

Littelfuse - IXFH150N30X3

MOSFET from Littelfuse
300 V, 177 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
300 V
Drain Source Resistance:
8.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
BSS127S Image
Download Datasheet  Request Quote  Product Details

Diodes Incorporated - BSS127S

MOSFET from Diodes Incorporated
600 V, N-Channel MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.07 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
80000 to 190000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 ºC
Package:
SOT23
Applications:
Motor Control, Backlighting, DC-DC Converters, Pow...
more info
APT47N60SC3(G) Image
Download Datasheet  Request Quote  Product Details

Microchip Technology - APT47N60SC3(G)

MOSFET from Microchip Technology
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
47 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
70 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
417 W
Temperature operating range:
-55 to 150 Degree C
Package:
D3PAK
Industry:
Commercial, Military
more info
PSMN6R7-40MLD Image
Download Datasheet  Request Quote  Product Details

Nexperia - PSMN6R7-40MLD

MOSFET from Nexperia
-20 to 20 V, 6.5 to 31 nC, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
5.5 to 16.7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK33
Industry:
Commercial, Industrial
Applications:
Secondary side synchronous rectification, DC-to-DC...
more info
 Request Quote  Product Details

Advanced Power Electronics Corp - AP60AN4K8IT

MOSFET from Advanced Power Electronics Corp
27.8 W, 600 V, 1.8 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.8 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
4.8 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
27.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220CFM-T
Industry:
Industrial, Commercial
more info
PJMF600N65E1 Image
Download Datasheet  Request Quote  Product Details

Panjit Semiconductor - PJMF600N65E1

MOSFET from Panjit Semiconductor
650 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.3 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
502 to 600 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
13 to 32 W
Temperature operating range:
-55 to 150 Degree C
Package:
ITO-220AB-F
Industry:
Commercial, Military
Applications:
PD Charger, Adapter, Monitor PSU
more info
RM140N150AT2 Image
Download Datasheet  Request Quote  Product Details

Rectron Semiconductor - RM140N150AT2

MOSFET from Rectron Semiconductor
150 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
140 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
6.2 to 7.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
320 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
DC/DC Converter, Ideal for high-frequency switchin...
more info
 Request Quote  Product Details

Goford Semiconductor - 2305

MOSFET from Goford Semiconductor
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
42 to 70 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management
more info
 Request Quote  Product Details

First Silicon - FTK0504DFN33

MOSFET from First Silicon
40 V, 50 A, N-Channel Enhancement Mode

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.5 to 7.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3.3*3.3-8L
Industry:
Industrial, Commercial
more info
Download Datasheet  Request Quote  Product Details

Cystech Electronics - MTAK9Y3-0-T5-G

MOSFET from Cystech Electronics
20 V, 0.8 to 1 A, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.8 to 1 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
0.3 to 1.2 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.78 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-723
Industry:
Industrial, Commercial
more info
TK6P53D Image
Download Datasheet  Request Quote  Product Details

Toshiba - TK6P53D

MOSFET from Toshiba
525 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
525 V
Drain Source Resistance:
1100 to 1300 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
100 W
Temperature operating range:
150 Degree C
Package:
DPAK
Applications:
Switching Regulator Applications
more info
R6007ENJ Image
Download Datasheet  Request Quote  Product Details

ROHM Semiconductor - R6007ENJ

MOSFET from ROHM Semiconductor
600 V, N-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-7 to 7 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
570 to 1200 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
78 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Industrial, Commercial
Applications:
Switching
more info
IRHNJ9130 Image
Download Datasheet  Request Quote  Product Details

Infineon Technologies - IRHNJ9130

MOSFET from Infineon Technologies
-100 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
340 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.5
Industry:
Space, Military
more info
SiS903DN-T1-GE3 Image
Download Datasheet  Request Quote  Product Details

Vishay - SiS903DN-T1-GE3

MOSFET from Vishay
-20 V, P-Channel Enhancement Mode MOSFET

Product Specs

Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-6 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
16.7 to 40 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
23 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Load switch, Battery protection, Adapter and charg...
more info
Have a Custom Requirement?
Parametric Search Select multiple parameters and narrow results

Filters

Industry

Manufacturers

More

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Submit

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.