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MOSFETs from Manufacturers in Germany - Page 49

1,322 MOSFETs from 3 manufacturers meet your specification.
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1,322 MOSFETs from 3 Manufacturers
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Page 49 of 89
IPDD60R190G7 Image
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Infineon Technologies - IPDD60R190G7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 13 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.164 to 0.409 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
76 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
PFC stages and PWM stages (TTF, LLC) for high powe...
more info
IPB60R060C7 Image
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Infineon Technologies - IPB60R060C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 to 35 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.052 to 0.115 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
162 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPB60R170CFD7 Image
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Infineon Technologies - IPB60R170CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 to 14 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.144 to 0.328 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPDD60R055CFD7 Image
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Infineon Technologies - IPDD60R055CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 to 52 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.045 to 0.103 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
329 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-HDSOP-10
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB60R280P7 Image
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Infineon Technologies - IPB60R280P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 12 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.214 to 0.500 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
53 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD60R170CFD7 Image
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Infineon Technologies - IPD60R170CFD7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 to 14 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.144 to 0.328 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
76 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
Suiteable for Soft Switching topologies, Optimized...
more info
IPB65R310CFD Image
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Infineon Technologies - IPB65R310CFD

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.2 to 11.4 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.280 to 0.730 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
104.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
more info
IPD50R380CE Image
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Infineon Technologies - IPD50R380CE

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8.9 to 14.1 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.35 to 0.90 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
98 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD80R600P7 Image
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Infineon Technologies - IPD80R600P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 to 8 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
0.51 to 1.33 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
Recommended for hard and soft switching fly back t...
more info
IPB60R120P7 Image
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Infineon Technologies - IPB60R120P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 26 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.100 to 0.234 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
95 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
AUIRF7379Q Image
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Infineon Technologies - AUIRF7379Q

MOSFET from Infineon Technologies
30-55 V Dual N and P-Channel Automotive MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-4.3 to 5.8 V
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.038 to 0.180 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Automotive
more info
IPB60R120C7 Image
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Infineon Technologies - IPB60R120C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 to 19 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.103 to 0.231 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
92 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPB60R040C7 Image
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Infineon Technologies - IPB60R040C7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
32 to 50 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.034 to 0.077 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
227 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO 263
Applications:
PFC stages and PWM stages(TTF, LLC) for high power...
more info
IPD65R650CE Image
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Infineon Technologies - IPD65R650CE

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.4 to 10.1 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.54 to 1.40 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
86 W
Temperature operating range:
-40 to 150 Degree C
Package:
PG-TO252
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
IPD80R750P7 Image
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Infineon Technologies - IPD80R750P7

MOSFET from Infineon Technologies
500-950 V CoolMOS N-Channel Power MOSFET

Product Specs

Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.6 to 7 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
0.64 to 1.66 Mohm
Gate Source Voltage:
20 V
Power Dissipation:
51 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TO252-3
Applications:
PFC stages, hard switching PWM stages and resonant...
more info
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